蓝宝石R面上ZnO薄膜的NH_3掺杂研究  

Study on NH_3 Doping in ZnO Film Grown on R-plane of Sapphire Substrate

作　　者：王金忠[1] 杜国同[1] 马艳[1] 赵佰军[1] 杨晓天[1] 张源涛[1] 刘大力[1] 李万程[1] 杨洪军[1] 杨树人[1] 吴爱国[2] 李壮[2] 

机构地区：[1]吉林大学电子科学与工程学院,吉林长春130023 [2]中国科学院长春应用化学研究所电分析化学国家重点实验室,吉林长春130022

出　　处：《发光学报》2003年第4期335-338,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(59910161983;60177007和60176026);国家"863"计划(2002AA311130)资助项目

摘　　要：以NH3为掺杂源,利用金属有机化学气相沉积(MOCVD)系统在蓝宝石R面上生长出掺氮ZnO薄膜。通过XRD,SEM测量优化了其生长参数,在610℃和在80sccm的NH3流量下生长出了〈1120〉单一取向的ZnO薄膜。经Hall电阻率测量,得知该薄膜呈现弱p型或高电阻率,并对其光电子能谱进行了研究。ZnO thin films doped with NH3 have been grown on Rplane sapphire substrate by MOCVD and the growth parameters have been optimized by XRD and SEM method. The only 〈1120〉 oriented ZnO thin film has been obtained in 610℃ and 80sccm NH3 flux, and the FWHM of 〈1120〉 plane Xray diffraction peak is only 050°. At the same time, the samples' SEM images show that the surface of the sample with 80sccm NH3 is the most smooth, which may be related to the amount of hydrogen atom in the sample. The electronics properties of the samples were determined by Hall method. The results show that the resistivity of the film with 80sccm NH3 is up to 108Ω·cm, and the film with 50sccm NH3 shows low ptype. In order to investigate the nitrogen atom form in the samples, Xray photoelectron spectra of the samples have been studied. The results show that the N1s photoelectron comes from N3- for the sample with 50sccm NH3. For the sample with 80sccm and 110sccm NH3, the N1s photoelectron comes from NH2- and NH-2, respectively. This implies that some hydrogen atoms were introduced into the samples with increase of NH3 flux. All above indicate that high quality ZnO thin film doped with NH3 has been obtained on Rplane sapphire substrate. Furthermore, some films show not only high resistivity but also low ptype, which is good for the application of ZnO film. 

关 键 词：蓝宝石R面 氧化锌薄膜 金屑有机化学气相沉积 X射线光电子能谱 ZNO薄膜 NH3掺杂 半导体 氮掺杂 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055