AlGaInP/GaAs异质结双极晶体管直流特性研究  

DC performance of AlGaInP/GaAs HBT

作　　者：李冰寒[1] 刘文超[1] 周健[1] 夏冠群[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《功能材料与器件学报》2003年第3期327-332,共6页Journal of Functional Materials and Devices

摘　　要：制备了大尺寸AlGaInP/GaAsSHBT和DHBT,对其直流特性进行了测试,并分析了AlGaInP/GaAs单异质结晶体管(SHBT)和双异质结晶体管(DHBT)的直流特性差异,深入研究了影响AlGaInP/GaAsHBT开启电压(Voffset)的各个因素。结果表明:AlGaInP/GaAsHBT开启电压与外加基极电流密切相关,采用宽发射区可大大降低器件的开启电压。Large- scale Heterojunction Bipolar Transistors were fabricated by using AlGaInP/GaAs HBT material grown by MOCVD. DC characteristics of AlGaInP/GaAs SHBT and AlGaInP/GaAs DHBT were studied. In addition, the collector- emitter offset voltages of AlGaInP/GaAs HBT were investigated, and several electrical factors affecting the offset voltage were discussed in detail. The results show that the collector- emitter offset voltages of AlGaInP/GaAs HBT are closely related to base current. And the collector- emitter offset voltage of AlGaInP/GaAs HBT can be decreased greatly by adopted wide emitter.

关 键 词：AlGaInP/GaAs 异质结双极晶体管 直流特性 开启电压 SHBT DHBT 

分 类 号：TN322.8[电子电信—物理电子学]