SiGe HBT发射极台面湿法腐蚀技术研究  

Research on wet etching technique for SiGe HBT emitter mesa for mation

作　　者：熊小义[1] 刘志农[1] 张伟[1] 付玉霞[1] 黄文韬[1] 刘志弘[1] 陈长春[1] 窦维治[1] 钱佩信[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微纳电子技术》2003年第10期15-16,41,共3页Micronanoelectronic Technology

摘　　要：在SiGeHBT的制造工艺中,为了防止干法刻蚀发射极台面对外基区表面造成损伤,从而导致SiGeHBT小电流下较大漏电问题,对SiGeHBT发射极台面的湿法腐蚀技术进行了研究。通过改变超声功率、腐蚀液温度,从中获得了较为理想的腐蚀条件。In the double-mesa SiGe HBT technology,extrinsic base surface would be damaged during emitter mesa formation with RIE.This would lead to high junction leakage current ,conse-quently degrading the characteristics of SiGe HBT.This paper investigates wet etching technique for SiGe HBT emitter mesa formation.By comparing different ultrasonic power and different solu-tion temperature,the suitable etching condition is obtained to improve SiGe HBT leakage current characteristics.

关 键 词：SIGE HBT 制造工艺 湿法腐蚀 异质结双极晶体管 超高真空低压化学汽相淀积 硅锗 

分 类 号：TN322.8[电子电信—物理电子学]