含InAs自组装量子点肖特基二极管的关联放电效应  

CORRELATED DISCHARGING OF InAs QUANTUM DOTS IN METAL-SEMICONDUCTOR-METAL STRUCTURE

作　　者：李宏伟[1] 王太宏[1] 

机构地区：[1]中国科学院物理研究所,北京100080

出　　处：《物理学报》2001年第10期2038-2043,共6页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :6992 5 410和 1990 40 15 )~~

摘　　要：制作了含自组织量子点的金属 半导体 金属双肖特基势垒器件 ,研究了器件的电流输运特性 .在量子点充放电造成的电流迟滞回路的基础上 ,观察到了电压扫描过程中的电流由低态到高态的跳跃现象 .这种电流跳跃来源于充电量子点的关联放电效应 .根据量子点系统的哈密顿量 ,分析了充电量子点关联放电的原因 .这种关联放电效应起源于量子点与 2DEG的相互作用 ,当一个量子点放电时通过量子点和 2DEG电流的变化会影响其他的量子点 ,从而促使其放电 。We report a correlated discharging process in current transport through metal-semiconductor-metal structures containing InAs self-assembled quantum dots. Due to the charged and discharged states of quantum dots, two different current states with a round hysteresis loop are usually observed in our structure. The transitions between the two current states are controlled by the applied voltages. Besides the normal charging and discharging processes, a correlated discharging is observed at 77K. Interactions that relate to the electrons in the quantum dots in the system are considered. The correlated discharging process is attributed to the interaction between electrons in the quantum dots and the conducting two-dimensional electron gas beneath the dot layer. Based on our analysis a simple picture of the relaxation process is given.

关 键 词：INAS 自组装量子点 肖特基二极管 关联放电效应 砷化铟 半导体 

分 类 号：TN31[电子电信—物理电子学]