玻璃陶瓷基板上铜薄膜的化学气相沉积  

Thin copper films prepared by chemical vapor deposition on glass-ceramic substrates

作　　者：刘杨秋[1] 梁彤祥[1] 符晓铭[1] 倪晓军[1] 

机构地区：[1]清华大学核能技术设计研究院,北京100084

出　　处：《清华大学学报（自然科学版）》2003年第6期808-810,共3页Journal of Tsinghua University(Science and Technology)

摘　　要：使用低介电常数基板和高电导率、高抗电迁移的金属Cu进行布线,可以提高高密度电子封装的传输速度和可靠性。采用乙酰丙酮铜作为前驱体,在常压下利用化学气相沉积技术对玻璃陶瓷基板进行Cu薄膜金属化。利用热重分析、X射线衍射和扫描电子显微镜等技术对前驱体、Cu薄膜进行分析观察。结果表明:影响Cu导体的电阻的主要因素是沉积温度。在温度为290～310℃,N2气流量为200～350mL/min和H2气流量为450～600mL/min的条件下,获得了致密的Cu薄膜,Cu导体方块电阻为25mΩ。Low dielectric constant glassceramic substrates and low resistivity, high electromigration resistance copper conductors have drawn attention as new substrates for high density electronic packaging. Thin copper films were deposited on glassceramic substrates using copper(Ⅱ) acetylacetonate precursor using atmospheric pressure chemical vapor deposition. TGA, XRD and SEM were used to study the effects of deposition temperatures and gas flow rates on the copper conductor sheet resistance. The results showed that with increasing deposition temperature, the copper resistance decreased until 300 ℃ and then increased. Between 290 ℃ and 310 ℃, the sheet resistivity of the copper thin film was 25 mΩ for N2 carrier gas flow rates from 200 mL/min to 350 mL/min and H2 reacting gas flow rates from 450 mL/min to 600 mL/min.

关 键 词：铜薄膜 化学气相沉积 玻璃陶瓷基板 微电子封装 布线材料 乙酰丙酮铜 

分 类 号：TN405.94[电子电信—微电子学与固体电子学] TN304.055