GaInP/(Al_xGa_(1-x))InP多量子阱结构的光荧光特性分析  

PHOTOLUMINESCENCE OF GaInP/(Al_xGa_(1-x))InP MULTI-QUANTUM WELL

作　　者：陈练辉[1] 范广涵[1] 陈贵楚[1] 吴文光[1] 李华兵[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《华南师范大学学报（自然科学版）》2003年第3期60-63,共4页Journal of South China Normal University(Natural Science Edition)

基　　金：国家科技攻关计划基金资助项目(00-068)

摘　　要：利用金属有机化合物气相沉积(MOCVD)技术生长了GaInP/(AlxGa1-x)InP多量子阱(MQW)结构材料,对其进行光荧光特性测量,观察到在波长λ=647 8nm和λ=861 6nm处分别存在一个强发光锋和一个弱发光峰.理论计算和实测结果基本一致.Photoluminescence of GaInP/(AlxGa1-x)InP MQW materials grown by MOCVD was measured. A strong peak at λ=6478 nm and a weak peak at λ=8616 nm on the photoluminescence spectrum were observed. The calulation results are basically in agreement with the actual results.

关 键 词：GaInP/(AlxGa1-x)InP 多量子阱 光荧光特性 发光二极管 半导体 光荧光谱 发光锋 

分 类 号：TN304.26[电子电信—物理电子学] O472.3[理学—半导体物理]