碲镉汞材料少子寿命的微波反射光电导衰减测量  

Measurement on Minority Carrier Lifetime of Mercury Cadmium Tel luride Material by Microwave Photoconductivity Decay Method

作　　者：黄晖[1] 李亚文[1] 马庆华[1] 陈建才[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2003年第6期42-44,48,共4页Infrared Technology

摘　　要：详细说明了用微波反射光电导衰减 (μ PCD)测量碲镉汞材料 (MCT)中少数载流子寿命的原理。μ PCD系统对样品少数载流子寿命的测量范围为 2 0ns至 3ms,测量温度可以从 80K到 32 5K变化 ,整个系统的测量由计算机控制自动进行 ,可以对样品进行X Y平面扫描测量并进行结果数据分析。同时 ,还报道了用 μA non-contact lifetime screening technique for me asuring minority carrier lifetime in HgCdTe(MCT)using the microwave photocondu ctivity decay (μ-PCD) is described. The μ-PCD system described is capable of measuring lifetime ranging from 20 ns to 3 ms. In μ-PCD system the reflecte d 10 GHz millimeter-wave (mm-wave) signal is proportional to a transient chang e in photoconductivity induced by a short (904nm) GaAs laser pulse. The system u ses a computer controller for 80 K to 325 K temperature control, X-Y wafer tra nslation and data acquisition and analysis. The results of μ-PCD is equivale nt to standard photoconductive decay. Application of this technique, LPE MCT ep ilayer characterization, is discussed. Spatial mapping of lifetime over an MCT wafer is demonstrated.

关 键 词：微波反射光电导衰减 碲镉汞材料 少数载流子 寿命测量 红外焦平面列阵 

分 类 号：O472.3[理学—半导体物理] TN213[理学—物理]