标准温度和衬底分步清洗对GaN初始生长影响RHEED研究  

Study of ECR-Plasma Cleaning of Sapphire Substrate Using RHEED

作　　者：郎佳红[1] 顾彪[1] 徐茵[1] 秦福文[1] 曲钢[1] 

机构地区：[1]大连理工大学三束材料表面改性国家重点实验室

出　　处：《红外技术》2003年第6期64-68,共5页Infrared Technology

基　　金：国家自然科学基金资助项目 (No .699760 0 8)

摘　　要：在经过校温的ECR PEMOCVD装置上 ,通过分析RHEED(反射高能电子衍射 )图像研究了常规清洗和ECR等离子体所产生的活性氢氮等离子体源对蓝宝石衬底进行清洗、氮化实验 ,结果表明 :经常规清洗的蓝宝石衬底的表面晶质差异很大 ;按照经验清洗 30min是不能清洗充分的 ,那么根据情况进行多步清洗就显得很重要了 ;结果表明清洗得很充分的衬底经 2 0min的氮化出来 ,而未清洗充分的衬底 2The normal cleaning effect and the cleaning and n it ridation effect of hydrogen and nitrogen ECR plasma for sapphire substrates were researched by analyzing RHEED image in ECR-PEMOCVD system whose temperature ha d been calibrated. The results indicated that much difference lies for surface q uality of sapphire substrate by normal cleaning; The 30-minute cleaning for som e substrates is insufficient and the multi-step cleaning is needed; Sufficientl y cleaned sapphire substrates have been nitrided for 20 minutes by ECR hydrogen and nitrogen plasma and smooth and clear nitridation layer can be obtained, whil e insufficiently cleaned ones cannot be nitrided for 20 minutes or longer time.

关 键 词：RHEED 反射高能电子衍射 蓝宝石 GAN 标准温度 衬底分步清洗 

分 类 号：TN304[电子电信—物理电子学] TN305.97