立方氮化硼(c-BN)薄膜的光学带隙  

Optical Band Gap of Cubic Boron Nitride (c-BN) Thin Films

作　　者：冯贞健[1] 于春娜[1] 陈光华[1] 

机构地区：[1]北京工业大学教育部新型功能材料重点实验室,北京100022

出　　处：《北京工业大学学报》2003年第3期381-384,共4页Journal of Beijing University of Technology

基　　金：国家自然科学基金(69876003;19874007)

摘　　要：用两步射频溅射法在n型Si(111)片和熔融石英片上沉积出不同体积分数的立方氮化硼(c-BN)薄膜,薄膜的成分由傅里叶红外吸收谱标识;用紫外-可见分光光度计测量了沉积在石英片上的BN薄膜的透射光谱T_e(λ)和反射光谱R_e(λ),薄膜的厚度用台阶仪测得。由透射、反射光谱计算了薄膜的光吸收系数a,进而采用有效的中间形式,确定了氮化硼薄膜的光学带隙。结果表明:随着c-BN体积分数的增加,光学带隙随之增大。确定出的光学带隙和经验公式的计算结果相吻合。The boron nitride thin films with different cubic phase content were deposited on n-type Si(111) and fused silica substrates by radio frequency(RF) sputtering of two-stage deposition process. The films were characterized by Fourier transform infrared (FTIR) spectroscopy. The transmittance Te(λ) and reflectance Re(λ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by Alpha-step. The absorption coefficient was calculated from Te(λ) and Re(λ). The optical band gap(Eg) of the films was determined by effective medium form of formula containing Eg. The results indicated that the Eg increases with the increase of the content of c-BN. The Eg is almost equal to calculated results obtained from the empirical formula.

关 键 词：立方氮化硼薄膜 射频溅射 光学带隙 

分 类 号：O484.41[理学—固体物理]