激光晶化多晶硅的制备与XRD谱  

Poly-silicon's preparation by excimer laser annealing and characterization by XRD

作　　者：廖燕平[1] 黄金英[1] 郜峰利[1] 邵喜斌[1] 付国柱[1] 荆海[1] 缪国庆[2] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所北方液晶工程研究开发中心,长春130021 [2]中国科学院激发态物理重点实验室,长春130021

出　　处：《吉林大学学报（理学版）》2004年第1期99-102,共4页Journal of Jilin University:Science Edition

基　　金：国家863计划项目基金(批准号:2002AA303250);计办高技(批准号:[2001]544号);吉林省科技发展计划项目(批准号:20010305).

摘　　要：对氢化非晶硅(a-Si:H)进行了脱氢和不同能量密度的准分子激光晶化多晶硅的实验,对所得样品用X射线衍射表征.针对多晶硅(111)面特征峰的强度、晶面间距和宽化信息,分析了激光功率密度对晶化多晶硅结晶度和应力的影响,根据谢乐公式(Scherrer)估算了晶粒的大小,得到用准分子激光晶化多晶硅的较佳工艺参数,并且验证了激光辐射对薄膜材料作用的3种情况.Based on the dehydrogenation of a-Si∶H and the excimer laser annealing crystallization of a-Si thin films at various laser energy density, poly-silicon samples were obtained and characterized with XRD. According to the p-Si (111) plane characteristic peak intensity, widening information and interplanar distance, the influence of laser power density on the crystallization degree and stress was analyzed in detail. The grain size was estimated according to the Scherrer formula, the better process parameters of laser annealing crystallization p-Si were obtained and the three stages of laser radiation to the thin film material were attested.

关 键 词：氢化非晶硅 脱氢 激光晶化 多晶硅 X射线衍射 半宽度 制备 XRD谱 薄膜材料 

分 类 号：O471.4[理学—半导体物理] O484.4[理学—物理]