MOS型硅功率器件平面终端结构  

Planar Termination Stsructures of MOS Poower Devices

作　　者：秦祖新[1] 刘三清[1] 

机构地区：[1]华中理工大学,武汉430074

出　　处：《微电子学》1992年第2期37-44,共8页Microelectronics

摘　　要：本文介绍了MOS型硅功率器件在平面工艺条件下常用的电场限制环以及场板终端结构的基本设计理论和设计方法,讨论了这两种结构的优化设计的一般原则。在此基础上探讨了平面工艺p-n结终端技术发展所面临的课题。Basic theories and techniques for designing field limiting rings and field plate termination structures commonly used in planar process for Si MOS power devices are presented in the paper. General principles for optimal design of the two structures are discussed. Problems confronted in developing planar termination techniques are investigated.

关 键 词：硅功率器件 MOS器件 终端结构 

分 类 号：TN386.1[电子电信—物理电子学]