定域无缺陷SOI的制备  

FABRICATION OF SOI WITH LOCALIZED DEFECTLESS

作　　者：张鹏飞[1] 钱佩信[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微细加工技术》1992年第3期21-24,共4页Microfabrication Technology

摘　　要：两种行之有效的晶粒间界限制技术:热沉结构和硅槽结构使区熔再结晶SOI实现定域无缺陷,这是采用区熔技术制备SOI的技术关键和难点所在。本文讨论了两种结构限制晶界的机理。In this paper, such effective techniques as Heat Sink structure and Grooved structure have been proposed to localize grain-boundaries during Zone-Melting -Recrystallization(ZMR).These techniques are the key points of ZMR-SOI technology. The mechanisms of defects localization of the two structures have been reviewed.

关 键 词：SOI 晶粒间界 制备 半导体材料 

分 类 号：TN304.055[电子电信—物理电子学]