P与GaAs(100)表面相互作用的温度效应  

TEMPERATURE EFFECTS ON THE INTERACTION BETWEEN P AND GaAs(lOO) SURFACE

作　　者：卢学坤[1] 郝平海[1] 贺仲卿[1] 侯晓远[1] 丁训民[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《物理学报》1992年第10期1728-1736,共9页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：本文采用原位X射线光电子能谱、紫外光电子能谱、高分辨率电子能量损失谱和低能电子衍射技术,研究了温度对P与GaAs(100)表面相互作用的影响。结果表明,经退火后,室温下淀积于GaAs表面的非晶P大部分脱附,仅剩下少量无规分布于表面的P集团。集团中部分P与衬底Ga原子成键,另一部分P则以单质形式存在,继续提高温度退火,将使P集团中的P全部与衬底发生反应生成GaAsP薄层。在高温GaAs衬底上淀积P,将得到GaAsP固溶体薄层。这一薄层有望成为GaAs表面理想的钝化膜。Temperature effects on interaction between P and GaAs (100) surface have been studied by in-situ X-ray photoemssion, uhra violet photcemission, high resolution electron energy loss specrroscopy and low energy electron diffraction techniques. The results show that annealing will make most of the amorphous P, which are deposited on GaAs(lOO) surface at room temperature, desorb with some randomly distributed P-clusters left on the surface. In these clusters, some of the P atoms are bonded to the Ga atoms of the substrate, others exist in the form of element. Higher temperature annealing will make all the left P atoms interact with the substrate and form GaAsP thin layer. Film of GaAsP solid solution will be obtained when depositing P on high temperature GaAs substrate. This film is suggested to be a promissing passi-vating film for GaAs surface.

关 键 词：表面 磷 砷化镓 相互作用 温度相关 

分 类 号：O471[理学—半导体物理]