Φ100mm掺硫InP单晶生长研究  

The study of Φ100mm sulfur doped InP single crystal growth

作　　者：徐永强[1] 李贤臣 孙聂枫[1] 杨光耀[1] 周晓龙[1] 谢德良[1] 刘二海[1] 孙同年[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051 [2]七一五二一部队542厂,河南新乡453002

出　　处：《半导体技术》2004年第3期31-34,共4页Semiconductor Technology

基　　金：国家自然科学基金(60276008)

摘　　要：InP以其众多的优越特性使之在许多高技术领域有广泛应用。掺硫n型InP材料用于激光器、LED、光放大器、光纤通信等光电领域。为了降低成本和适应新型器件制造的要求,本文进行了直径100mm掺硫InP单晶生长和性质研究。首先解决了大容量直接合成技术,其次解决了大直径单晶生长的关键技术,保证了一定的成晶率。采用降低温度梯度等措施,降低位错密度,提高晶体完整性。制备出100mm掺硫InP整锭<100>InP单晶和单晶片。经过测试其平均EPD小于5×104cm-2,载流子浓度大于3×1018cm-3。本文还对影响材料成晶的放肩角进行了研究,一般生长大直径单晶采用大于70°或平放肩技术都可以有效地避免孪晶的产生。InP is being used as a platform for a wide variety of fiber communications components,including lasers, LEDs, semiconductor optical amplifiers, modulators and photo-detectors. In recentyears, we have developed a high quality 100mm S-doped InP single crystal growth using the HP-LECmethod after P-injection direct synthesis polycrystalline. Crystalline perfection of f 100mm InP wasstudied by etch pit density (EPD) measurement of <100>wafers. The measured average EPD of 100mmS-doped substrates could be reduced to less than 5×104cm-2. The carrier concentration of the S-doped InP is over3×1018cm-3. Controlling the angle of the early stage 70°~180° will avoid the twinof the large diameter of InP crystal.

关 键 词：磷化铟 单晶生长 位错密度 大容量直接合成 

分 类 号：TN304[电子电信—物理电子学]