氧退火对钛酸锶钡薄膜介电常数的影响  

Effect of Oxygen Annealing on Dielectric Constant of Ba_(1-x)Sr_xTiO_3 Thin Film

作　　者：陈平[1] 黄美浅[1] 李斌[1] 李观启[1] 

机构地区：[1]华南理工大学应用物理系,广东广州510640

出　　处：《电子元件与材料》2004年第3期37-38,42,共3页Electronic Components And Materials

基　　金：教育部留学回国人员科研启动基金资助项目;华南理工大学自然科学基金资助项目

摘　　要：采用氩离子束镀膜技术和硅平面工艺,在SiO2/Si衬底上淀积钛酸锶钡 (Ba1-xSrxTiO3)薄膜,研究在氧气氛中不同温度和时间的退火对薄膜的介电常数的影响。实验结果表明,在退火温度为600℃时,随着氧退火时间的增加,钛酸锶钡薄膜的相对介电常数减小;而在退火时间为30 min时,随着退火温度的增加,钛酸锶钡薄膜的相对介电常数增加。微观结构分析和极化理论解释了这一现象。Ba1-xSrxTiO3 thin film was deposited on SiO2/Si by argon-ion beam sputtering technique and silicon planner process, the effect of oxygen annealing conditions (annealing time and annealing temperature) on dielectric constant were studied. Experimental results show that dielectric constant decreases with the increase of annealing time when annealing temperature is 600 C; increases with the increase of annealing temperature when the annealing time is 30 min. Microstructure analysis and polarization theory explains the fact.

关 键 词：MIOS结构 C-V特性 介电常教 退火 

分 类 号：TN432[电子电信—微电子学与固体电子学]