高隔离度S波段MEMS膜桥开关  

High-isolation S-band MEMS Membrane Switches

作　　者：朱健[1] 周百令[1] 郁元卫[2] 陆乐[2] 贾世星[2] 张龙[2] 

机构地区：[1]东南大学仪器科学与工程系,南京210096 [2]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2004年第1期64-67,共4页Research & Progress of SSE

基　　金：江苏省自然科学基金资助项目 (BK2 0 0 1192 )

摘　　要：常规的 MEMS膜桥开关在 1 0 GHz以上频段才具有低插损、高隔离度 (>2 0 d B)的优点。文中介绍了一种应用于微波低频段—— S波段的高隔离 MEMS膜桥开关 ,给出了开关的设计与优化方法 ,建立了开关的等效电路模型。通过双膜桥结构、选择高介电常数的介质膜、微电感结构膜桥这些措施 ,达到提高开关隔离度的目的。利用 HFSS软件仿真的结果表明 ,该开关在微波低频段 (3～ 6GHz)有着很好的隔离性能。开关样品在片测试的电性能指标 :插损 <0 .3 d B,隔离度 >40 d B,驱动电压 <2 0Conventional membrane switches have low-loss and high-isolation(>20dB) performance only at the frequency above 10 GHz. This paper presents the design, optimization and equivalent circuit model for S-band MEMS membrane switches with two-bridge, which is based on surface micromachining fabrication. The major processes consist of fabricating CPW transmission lines, dielectric layer on silicon substrate, and inductive metal bridge. A high-isolation MEMS switch at S-band with high ε dielectric layer and dual inductor-tuned bridge membrane are designed to increase the switch isolation. The result simulated by HFSS shows high-isolation performance at 3～6 GHz. On-wafer measurement results are as follows: the insertion loss(IL) is less than 0.3 dB, the isolation(ISO) is more than 40 dB and the drive voltage is less than 20 V at S-band.

关 键 词：MEMS 膜桥开关 隔离度 S波段 双膜桥结构 

分 类 号：TN405[电子电信—微电子学与固体电子学] TH-39[机械工程]