掺Er-Al_2O_3薄膜发光特性的研究  

Photoluminescence characterization of Er -implanted Al_2O_3 thin films

作　　者：肖海波[1] 张峰[1] 张昌盛[1] 程新利[1] 王永进[1] 陈志君[1] 林志浪[1] 张福民[1] 邹世昌[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所离子束重点实验室,上海200050

出　　处：《科技通讯（上海）》2004年第1期29-32,共4页

基　　金：国家863计划(No.2001AA312070)

摘　　要：通过离子束辅助沉积(IBAD)在热氧化SiO2上沉积Al2O3薄膜,在120keV下注入5×1015cm-2Er离子,Ar气氛下773～1273K退火1h。低温下测试PL谱线,随退火温度升高,发光强度上升。973K退火下发光强度特别低,并观察到Si衬底的1140nm峰。光透射谱表明几乎在所有的测试范围内尤其在1530nm处973K退火样品的透射谱强度最强,波导损耗最低。1530nm发光强度随退火温度的变化跟发光强度的变化相反。说明Er离子在514.5nm泵谱吸收界面σ跟Al2O3的光吸收损耗有一定关系。Al 2 O 3 films were deposited on thermally oxidized Si (100)substrates by ion beam assistant deposition(IBAD),and then implanted with 120keV,5×10 15 cm -2 Er ions.And then the samples were annealed at 773K to 1273K in Ar en vironment for 1h.Photoluminescence and optical transmission spectra of all samples were measured with optical spectrometer Nicolet 860.PL intensity increases with the annealed temperature,and P L intensity of the sample annealed at973K is the lowest and appears 1140nm peak.Optical transm ission spectra indicate that almost in all detected spectra the sample annealed at 973K corresponds to highest intensity and lowest abso rption.It is concluded that the lowest photoluminescence is due to changes in the pump absorption cro ss section,which is related to the minimum optical absorption of the Al 2 O 3 materials.

关 键 词：离子束辅助沉积 AL2O3薄膜 掺杂 PL谱 光透射谱 发光特性 

分 类 号：TN304.21[电子电信—物理电子学]