在a-平面蓝宝石衬底上分子束外延生长的ZnO和ZnMgO材料结构和光学性质(英文)  

Structural and Optical Characterization of ZnO and ZnMgO Films on a-Plane Sapphires by Molecular Beam Epitaxy

作　　者：李树玮[1] 小池一步 矢野满明 

机构地区：[1]中山大学光电材料与技术国家重点实验室,广州市新港西路135号510275 [2]大阪工业大学新材料研究中心

出　　处：《光散射学报》2004年第1期90-94,共5页The Journal of Light Scattering

摘　　要：氧化锌材料是新一代宽禁带光电子半导体材料,我们通过等离子体分子束外延设备,在a plane的蓝宝石衬底生长了高质量的氧化锌外延材料。在生长过程中用反射高能电子束衍射仪(RHEED),在位地研究了生长时材料薄膜的表面形貌。通过调节ZnMgO材料镁的组份,生长了禁带宽度可调的宽禁带材料。用紫外-可见透射光谱研究了ZnO,Zn0.89Mg0.11O和Zn0.80Mg0.20O薄膜材料的透射和吸收光谱性质,观察到Zn0.89Mg0.11O,Zn0.80Mg0.20O材料的吸收边的蓝移现象等。以上说明了我们用分子束外延生长 收稿日期:2003 07 22·09·　　第1期StructuralandOpticalCharacterizationofZnOandZnMgOFilmsona-planesapphiresbyMolecularBeamEpitaxy2004年设备成功的生长了高质量的氧化锌和组份渐变的ZnMgO薄膜材料。Recently the growth techniques of single-crystalline ZnO film promote much attention to ZnO-related materials for electronic and optoelectronic applications. ZnO and ZnMgO films were grown by radical-source molecular beam epitaxy, and the epilays on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties. The surface during growth was monitored by a reflection (high-energy) electron diffraction (RHEED) system. After the growth, these films were characterized by Field emission scanning electronic microscopy, transmission spectrum, photoluminescence (PL) using 325 nm line of a He-Cd laser, and electrical properties were measured by Hall measurement. The n-type doping with Al was successfully performed up to 5 × 10^(19) cm^(-3). Widening of bandgap energy by increasing Mg composition was observed by transmission spectrum.

关 键 词：氧化锌薄膜 分子束外延生长 光致发光 透射光谱 半导体材料 禁带宽度 镁酸锌 

分 类 号：O472.3[理学—半导体物理] O484.1[理学—物理]