多栅GaAs MESFET开关的结构设计  

Multi-Gate GaAs MESFET Switch

作　　者：陈新宇[1] 郝西萍[1] 陈继义[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《Journal of Semiconductors》2004年第4期450-453,共4页半导体学报（英文版）

摘　　要：论述了多栅开关的结构和特点 .针对多栅开关器件结构设计中的参数栅栅间距的选取作了分析 ,确定当栅栅间距等于源漏间距对栅数的平均值时 ,开关性能最优 。The structure and characteristic of multi-gate switch are described.A fundamental problem in switch design is to maintain low insertion loss when improving power handling capacity.Multi-gate switch solves the problem due to its typical structure.The optimality analysis of the distance between gates in the design of triple-gates switches is described.The results are verified by comparing two structures of triple-gate switches with the measured results.

关 键 词：多栅 开关 金属半导体场效应晶体管 砷化镓 栅栅间距 

分 类 号：TN386[电子电信—物理电子学]