MOCVD法生长Ca_(0.5)In_(0.5)P外延层的近红外光致发光与温度的依赖关系  

Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga_(0.5)ln_(0.5)P epilayer grown on GaAs substrate by MOCVD method

作　　者：高瑛[1] 赵家龙[1] 刘学彦 苏锡安 梁家昌[1] 李景[2] 关兴国[2] 章其麟[2] 

机构地区：[1]中国民航学院,天津300300 [2]河北半导体研究所,石家庄050051

出　　处：《光学学报》1992年第10期897-901,共5页Acta Optica Sinica

基　　金：国家自然科学基金;中国科学院长春物理研究所激发态物理开放实验室基金资助课题

摘　　要：测量了用金属有机物化学气相沉积(MOCVD)方法在GaAs衬底上生长的Ga_(0.5)In_(0.5)P外延层的近红外光致发光光谱,观察到三个与深能级有关的发光带,其峰值能量分别为1.17,0.99和0.85eV.研究了这些发光带的发光强度,峰值位置和半宽度随温度的变化关系,并初步分析其来源.The near-Infrared photoluminescence spectroscopies of Ga0.5In0.5P epilayer grown on GaAs substrate by metalorganic chemical vapor deposition (MOCVD) are measured. Three photoluminegcence peaks from deep levels are observed, and their peak energies are 1.17, 0.99 and 0.85eV, respectively. We further investigate the temperature dependence of the intensity, peak position and half width of the photoluminescence bands and discuss their origins.

关 键 词：近红外 光致发光 深能级 镓铟磷 

分 类 号：TN304.26[电子电信—物理电子学]