一种新型磁场MWECR-CVD和氢化非晶硅薄膜制备  

MWECR-CVD System with a New Magnetic Field and Deposition of a-Si∶H Films

作　　者：殷生毅[1] 陈光华[1] 吴越颖[1] 王青[1] 刘毅[1] 张文理[1] 宋雪梅[1] 邓金祥[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022

出　　处：《Journal of Semiconductors》2004年第5期530-534,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目 (No.G2 0 0 0 0 2 82 0 1)~~

摘　　要：为了简化多电磁线圈 MWECR- CVD装置 ,提出将单个电磁线圈和一个永磁体单元组合 ,以形成所需的新型磁场 .这一磁场可使等离子体集聚于样片台上方 ,显著提高了等离子体的能量密度 .应用这种新型磁场的 MWE-CR- CVD装置沉积氢化非晶硅薄膜 ,与采用单电磁线圈或双电磁线圈时相比 ,薄膜沉积速度大幅度提高 ,沉积速度达到采用传统 RF-In order to simplify the MWECR CVD system using multiple electromagnetic coils,the new magnetic fields generated by assembling a electromagnetic coils and a permanent magnet unit are presented.With these magnetic fields,the plasma is converged above the sample holder and the permanent magnet unit,and the energy density of plasma is enhanced obviously.Comparing to MWECR CVD system using single or double electromagnetic coils,this new magnetic field MWECR CVD system can obtain higher deposition rates of a Si:H films,and its deposition rates are multiple to ten times of that with conventional RF PECVD systems.

关 键 词：ECR—CVD 永磁体 磁场 氢化非晶硅 

分 类 号：O484[理学—固体物理]