Ga_(1-x)In_xSb/GaSb应变层超晶格的MOVPE生长  

Ga_(1-x)In_xSb/GaSb Strained Layer Superlattice Grown by MOVPE

作　　者：陆大成[1] 汪度[1] 刘祥林[1] 万寿科[1] 王玉田[2] 

机构地区：[1]中国科学院半导体研究所半导体材料科学开放实验室,北京100083 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1992年第9期584-587,T001,共5页半导体学报（英文版）

摘　　要：本文报道用常压金属有机物气相外延方法在 GaSb衬底上生长 Ga_(1-x)In_xSb/GaSb应变层超晶格材料.X射线双晶衍射谱和反射电子显微像表明超晶格结构的周期性,GalnSb阱的组分均匀性和异质结界面质量较好.观察到当In含量提高时起源于超晶格-衬底界面处的失配位错.低温光荧光测量显示出因量子尺寸效应导致的带间跃迁向高能方向的移动.Ga_(1-x)In_xSb/GaSb Strained Layer Superlattice (SLS) were grown by metalorganic vaporphase epitaxy on GaSb buffer layer in a horizontal reactor at atmospheric pressure by SM35AMOVPE system made by ourselves. The samples were examined by double crystal X-ray diffrac-tion, reflection electron microscopy (REM) and low temperature photoluminescence spectra(PL). The double crystal X-ray diffraction and REM show the SLS' have good period, uniformfraction of Ga or In in GaInSb and abrupt interface. The misfit dislocations appear at the in-terface of SLS and substrate when In fraction in GaInSb increases. Low temperature PL showthat interband transition shifts toward high energy owing to the quantum size effect.

关 键 词：应变层 晶格 生长 超晶格材料 

分 类 号：O78[理学—晶体学]