MOCVD生长GaAs/AlGaAs量子阱研究  

MOCVD Growth of GaAs/AlGaAs Multi-Quantum Wells

作　　者：任红文[1] 黄柏标[1] 刘士文[1] 刘立强[1] 徐现刚[1] 蒋民华[1] 

机构地区：[1]山东大学晶体材料研究所,济南250100

出　　处：《固体电子学研究与进展》1992年第1期4-7,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助

摘　　要：利用常压MOCVD技术在较低生长速率下生长出多种GaAs/AlGaAs多量子阱结构材料,利用低温PL谱和TEM对材料结构进行了表征。所得势阱和势垒结构厚度均匀平整,最窄阱宽为1.8nm。本研究表明,低速率(γ≤0.5nm/s)连续生长工艺能够避免杂质在界面富集,优于间断生长工艺,且在掺si n^+-GaAs衬底上所得量子阱发光强度高于掺Cr SI-GaAs衬底上的结果。Different GaAs/AlGaAs multi-quantum well(MQW) materials were grown by AP-MOCVD under very low growth rates. PL and TEM were used to measure and characterize the structures of the QWs. The measurements indentified very uniform barrier and smooth interfaces and layer thicknesses,and the thinnest well obtained was 1. 8nm. The study showed that the continuous growth method and low growth rates (r≤0.5nm/s) can overcome the shortcomings of impurity collection at the interfaces during the interupted growth period and interface roughness. And obtained PL intensities of QWs grown on Si-doped GaAs substrates were higher than that on Cr-doped GaAs substrates.

关 键 词：生长 量子阱 MOCVD GAAS/ALGAAS 

分 类 号：TN304.26[电子电信—物理电子学]