用PECVD法沉积α-C:H薄膜的研究  

The a-C:H Films Deposited by PECVD Method

作　　者：顾书林[1] 何宇亮[1] 王志超[1] 孙剑[1] 程光熙 

机构地区：[1]南京大学物理系,210008 [2]南京大学理化分析中心及固体微结构实验室,210008

出　　处：《固体电子学研究与进展》1992年第1期58-64,共7页Research & Progress of SSE

基　　金：轻工业部新技术开发及江苏省科委资助项目

摘　　要：本文报导了使用PECVD方法沉积的α-C:H溥膜的工艺条件、薄膜结构和物性之间的联系。指出,α-C:H膜中石墨和金刚石成分的比值密切相关于反应气氛CH_4/(CH_4+H_2)的比例以及沉积系统中的衬底温度和施加在平行板电极之间的直流偏压。最后,利用化学反应平衡方程讨论了α-C:H膜的沉积机理以及[H]基对生成膜结构的影响。The physical properties and structure of a PECVD deposited a-C: H films and their relation to the deposition conditions are repoted in this paper. It is shown that the ratio of graphite and diamond components in a-C:H films is closely related to the ratio of reactant gases CH4/(CH4 + H2) ,D. C. biases and substrate temperature Ts in the deposition system. Finally,the deposition mechanism of a-C:H films using the chemical equilibrium equation and the influence of [H] radical upon the structure of growing films are discussed.

关 键 词：非晶碳膜 金刚石 沉积 PECVD法 

分 类 号：TN304.055[电子电信—物理电子学]