离子束外延制备GaAs:Gd薄膜  

GaAs∶Gd film preparation by ion beam epitaxy

作　　者：宋书林[1] 陈诺夫[1] 周剑平[1] 尹志岗[1] 李艳丽[1] 杨少延[1] 刘志凯[1] 

机构地区：[1]中国科学院半导体所半导体材料科学重点实验室,北京100083

出　　处：《功能材料》2004年第3期336-337,共2页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60176001);国家重大基础研究计划资助项目(G20000365和G2002CB311905)

摘　　要：　室温条件下,用低能离子束外延制备了GaAs∶Gd薄膜,X射线衍射(XRD)结果表明除了GaAs衬底峰没有发现其它新相的衍射峰,并借助于高分辨X射线衍射(HR XRD)进一步分析了晶格常数的变化特点。俄歇电子能谱(AES)分析了样品表面的成分,及元素随深度的分布规律,在60nm深处元素的相对含量发生明显改变,运用原子力显微镜(AFM)揭示了样品表面的形貌特点。GaAs:Gd film was fabricated on GaAs (100) substrate by ion beam epitaxy at room temperature. There is no new peak except the GaAs substrate main peaks from the X-ray diffraction results. The lattice change is further measured with the help of high-resolution X-ray diffraction. Surface components and depth profiles were analyzed by Auger electron spectra. It was shown that the proportion of main components change at the depth of 60 nm while surface morphology was imaged by atomic force microscopy.

关 键 词：GaAs:Gd薄膜 低能离子束外延 GAAS衬底 

分 类 号：TN304.7[电子电信—物理电子学] TN304.054