氮化镓基高亮度发光二极管材料外延和干法刻蚀技术  

High performance gallium nitride based blue light emitting diode material epitaxy and dry etching fabrication technology

作　　者：罗毅[1] 邵嘉平[1] 郭文平[1] 韩彦军[1] 胡卉[1] 薛松[1] 孙长征[1] 郝智彪[1] 

机构地区：[1]清华大学电子工程系集成光电子学国家重点实验室,北京100084

出　　处：《中国有色金属学报》2004年第F01期381-385,共5页The Chinese Journal of Nonferrous Metals

基　　金：国家重点基础研究发展规划资助项目(TG2000036601);国家"八六三"计划资助项目(2001AA312190;2002AA31119Z);国家自然科学基金资助项目(60244001)

摘　　要：通过对氮化镓(Galliumnitride,GaN)基蓝色高亮度发光二极管(Highbrightnesslightemittingdiode,HB LED)材料金属有机气相外延(Metalorganicvaporphaseepitaxy,MOVPE)生长技术的研究和优化以及在有源区内引入新型InxGa1-xN/GaN多量子阱(Multiplequantumwells,MQWs)结构,获得了高性能的HB LED外延片材料。高分辨率X射线衍射(HighresolutionX raydiffraction,HR XRD)和变温光致荧光谱(Temperaturedependentphoto luminescencespectra,TD PLSpectra)测量表明外延材料的异质界面陡峭,单晶质量优异,并由变注入电致荧光谱(Injectiondependentelectroluminescencespectra,ID ELspectra)测量获得:HB LED芯片的峰值发光波长在注入电流为2mA至120mA变化下蓝移量小于1nm,电致荧光谱的半高全宽值(Fullwidthhalfmaximum,FWHM)在注入电流为20mA时仅为18nm。此外,还介绍了GaN基材料感应耦合等离子体(Inductivelycoupledplasma,ICP)干法刻蚀技术。考虑实际需要,本文作者开发了AlGaN/GaN异质材料的非选择性刻蚀工艺,原子力显微镜(Atomicforcemicroscope,AFM)观察得到AlGaN/GaN刻蚀表面均方根粗糙度RMS仅为0.85nm,与外延片的表面平整度相当。还获得了AlGaN/GaN高选择比的刻蚀技术,GaN和AlGaN的刻蚀选择比为60。The epitaxy technology of gallium nitride (GaN) based high brightness blue light emitting diode (HB-LED) materials grown by metal organic vapor phase epitaxy (MOVPE) was studied. The In_xGa_(1-x)N/GaN multiple-quantum-wells (MQWs) embedded epitaxial materials were characterized by high-resolution X-ray diffraction (HR-XRD), temperature dependent photoluminescence (TD-PL) spectra and injection dependent electroluminescence (ID-EL) spectra, respectively. The HR-XRD and TD-PL results indicate that the HB-LED epitaxial wafers have excellent crystal quality with abrupt heterostructure interfaces. The blue-shift of the emission peak wavelength is less than 1 nm as the injection current varies from 2 mA to 120 mA, and the full width at half maximum (FWHM) of the electroluminescence spectrum at 20 mA is only 18 nm. These data are among the best results reported so far. Secondly, we discussed our work on dry etching of GaN related materials by inductively coupled plasma (ICP). For nonselective etching of AlGaN/GaN heterostructure, the root-mean-square (RMS) surface roughness of the etched sample measured by atomic force microscope (AFM) is only 0.85 nm. On the other hand, we have demonstrated selectivity as high as 60 for AlGaN over GaN.

关 键 词：氮化镓 发光二极管 外延生长 干法刻蚀 HB-LED MOVPE 

分 类 号：TN312.8[电子电信—物理电子学]