国家自然科学基金(s60676001)

作品数：3被引量：2H指数：1
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Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer被引量：2
《Science China(Technological Sciences)》2011年第1期95-98,共4页SHANG LiWei JI ZhuoYu CHEN YingPin WANG Hong LIU Xin HAN MaiXin LIU Ming 
supported by the National Basic Research Program of China ("973" Project)(Grant Nos.2009CB320302,2011CB808404);the Na-tional Natural Science Foundation of China (Grant Nos.60676001,60676008)
Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/c...
关键词：OFET low voltage atomic layer deposition Al2O3 thin film high-k dielectric 
Active layer self-protection process for organic field-effect transistors
《Journal of Semiconductors》2009年第9期45-48,共4页刘舸 刘明 商立伟 涂德钰 刘兴华 王宏 柳江 
Project supported by the State Key Development Program for Basic Research of China(No.2006CB806204);the National Natural Science Foundation of China(Nos.60676001,60676008)
To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, C...
关键词：OFET PENTACENE CUPC STABILITY 
Study of top and bottom contact resistance in one organic field-effect transistor
《Chinese Physics B》2009年第8期3530-3534,共5页刘舸 刘明 王宏 商立伟 姬濯宇 刘兴华 柳江 
supported by National Basic Research Program of China (973 Program) (Grant No 2006CB806204);National Natural Science Foundation of China (Grant Nos 60676001,60676008 and 60825403)
This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transis...
关键词：organic field-effect transistor top contact geometry bottom contact geometry hybrid contact geometry 
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