国家自然科学基金(BK2008287)

作品数：4被引量：2H指数：1
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相关作者：刘斯扬钱钦松孙伟锋更多>>
相关机构：东南大学更多>>
相关期刊：《Journal of Southeast University(English Edition)》《Journal of Semiconductors》更多>>
相关主题：LDMOSHOT-CARRIEREFFECTWIDESTEP更多>>
相关领域：电子电信更多>>
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A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature被引量：1
《Journal of Semiconductors》2011年第6期27-32,共6页贾侃 孙伟锋 时龙兴 
Project supported by the Natural Science Foundation of Jiangsu Province,China(NoBK2008287);the Advanced Research of National Natural Science Foundation of Southeast University,China(NoXJ2008312)
A sub-circuit SPICE model of a MOSFET for low temperature operation is presented.Two resistors are introduced for the freeze-out effect,and the explicit behavioral models are developed for them.The model can be used i...
关键词：SPICE model low temperature SUB-CIRCUIT freeze-out effect voltage control resistor 
Analysis of hot-carrier degradation in N-LDMOS transistor with step gate oxide被引量：1
《Journal of Southeast University(English Edition)》2010年第1期17-20,共4页刘斯扬 钱钦松 孙伟锋 
The Natural Science Foundation of Jiangsu Province(No.BK2008287);the Preresearch Project of the National Natural Science Foundation of Southeast University(No.XJ2008312)
In order to minimize the hot-carrier effect（HCE）and maintain on-state performance in the high voltage N-type lateral double diffused MOS（N-LDMOS）, an optimized device structure with step gate oxide is proposed. Co...
关键词：HOT-CARRIER degradation step gate oxide N-type lateral double diffused MOS（N-LDMOS） 
Thermal characteristics investigation of high voltage grounded gate-LDMOS under ESD stress conditions
《Journal of Semiconductors》2009年第10期43-45,共3页孙伟锋 钱钦松 王雯 易扬波 
supported by the Natural Science Foundation of the Jiangsu Province(No.BK2008287);the Advanced Research of National Natural Science Foundation of Southeast University(No.XJ2008312)
The thermal characteristics of high voltage gg-LDMOS under ESD stress conditions are investigated in detail based on the Sentaurus process and device simulators.The total heat and lattice temperature distributions alo...
关键词：thermal characteristic gg-LDMOS ESD stress condition 
Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS
《Journal of Semiconductors》2009年第10期46-50,共5页钱钦松 刘斯扬 孙伟锋 时龙兴 
supported by the Jiangsu Provincial Natural Science Foundation(No.BK2008287)
A measuring technique based on the CP（charge pumping）method for hot-carrier degradation measurement of high voltage N-LDMOS is researched in depth.The impact of the special configuration on the CP spectrum and the g...
关键词：CP measurements N-LDMOS HOT-CARRIER interface states 
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