supported by the National Basic Research Program of China(2011CB932800 and 2013CB934200);Sino-British Collaboration Program(2010DFA64680);National Natural Science Foundation of China(20973043);Chinese Academy of Sciences(KGCX2-YW-375-3)
Control of blend morphology at multi-scale is critical for optimizing the power conversion efficiency(PCE)of plastic solar cells.To better understand the physics of photoactive layer in the organic photovoltaic device...
Project supported by the National Basic Research Program of China (Grant Nos.2010CB934300,2011CBA00607,and 2011CB932800);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004,60906003,61006087,and 61076121);the Science and Technology Council of Shanghai,China (Grant No. 1052nm07000)
Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film qualit...
Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800);the National Integrate Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906003,60906004,61006087,61076121,61106055).
Sb rich Ge_(2)Sb_(5)Te_(5) materials are investigated for use as the storage medium for high-speed phase change memory(PCM).Compared with conventional Ge2Sb2Te5,Ge_(2)Sb_(5)Te_(5) films have a higher crystallisation t...