Project supported by the Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University,China(Grant No.2020-52000083-01-324061);the National Natural Science Foundation of China(Grant No.61264004);the High-level Creative Talent Training Program in Guizhou Province,China(Grant No.[2015]4015)。
Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this pap...