Project supported by National Natural Science Foundation of China(Grant Nos.10874070,60976001,and 50872051);Natural Science Foundation of Jiangsu Province of China(Grant No.BK2008253);State Key Program for Basic Research of China(Grant Nos.2007CB935401 and 2010CB934402);Natural Science Foundation of Jiangsu Province for Universities(Grant No.09KJB510014);Nanjing University of Posts and Telecommunications Research Fund(Grant No.NY208057 and JG03309JX37)
This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanopartictes were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application ...