Natural Science Foundation of China(50802064,50752001,11074189);Shanghai Committee of Science and Technology(10520706800,09520714300,10JC1414800);the National Science&Technology Pillar Program(2009BAC62B02)
National Natural Science Foundation of China(51072137,11074189,50802064,50752001);Key Projects in the National Science & Technology(2009BAC62B02);Shanghai Committee of Science and Technology(09520714300,10520706800,0952nm00700)
National Natural Science Foundation of China (50752001);Chinese National Foundation of High Technology (2007AA804137, 2008AA8041606);Shanghai Committee of Science and Technology (0652nm044, 07JC14052);Program for Young Excellent Talents in Tongji University (2006KJ052);Shanghai Educational Development Foundation (2007CG26);Shanghai Key Lab Program (07DZ22302)
Chinese National Foundation of High Technology (2008AA8041606,2007AA804807, 2007AA804137);Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology (07DZ22302);Shanghai Educational Development Foundation (2007CG26);Program for Young Excellent Talents in Tongji University (2006KJ052);National Natural Science Foundation of China (50752001);Shanghai Committee of Science and Technology (055211010, 0652nm044, 07JC14052)
介绍了一种新制备低介电常数 SiO2薄膜的方法。以 TEOS 为前躯体、盐酸为催化剂、CTAB 作为模版剂,采用溶胶-凝胶法制备硅溶胶,以浸渍提拉法制备薄膜。采用 FITIR、XRD 和 AFM 等方法表征了薄膜,并用阻抗分析仪测量介电常数。结果表明,...
The Shanghai Committee of Scientific and Technical (0852nm01300, 07JC14052, 07DZ22302);National Natural Science Foundation of China (50752001);Shanghai Committee of Construction and Transportation
采用溶胶凝胶技术分别制备了 WO3 和 MoO3溶胶,PdCl2作为催化剂被掺入 WO3-MoO3复合溶胶中,然后采用提拉浸渍镀膜法成功制备了 WO3-MoO3复合薄膜。采用原子力显微镜和 X 射线衍射仪分别研究了薄膜的表面形貌和薄膜的晶态结构。采用紫外...