supported by the National Natural Science Foundation of China(Grant Nos.50702071 and 50772122);the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51002176)
A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectro...
supported by the National Natural Science Foundation of China (Grant No. 50772122);the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176)
This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films....
Project supported by the Shanghai Nanotechnology Promotion Center (Grant No 0452nm071);the National Natural Science Foundation of China (Grant Nos 50702071 and 50772122)
A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The films show paramagnetic behaviour when they are deposi...