国家重点基础研究发展计划(s2009CB929503)

作品数：3被引量：4H指数：1
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Structural,spectroscopic,and dielectric characterizations of Mn-doped 0.67BiFeO_(3)-0.33BaTiO_(3)multiferroic ceramics被引量：3
《Journal of Advanced Ceramics》2013年第3期252-259,共8页Qiming HANG Wenke ZHOU Xinhua ZHU Jianmin ZHU Zhiguo LIU Talaat AL-KASSAB 
This work is financially supported by the National Natural Science Foundation of China(Grant Nos.10874065,11174122 and 11134004);the National Basic Research Program of China(Grant Nos.2009CB929503 and 2012CB619400);key project from Ministry of Science and Technology of the People's Republic of China(Grant No.2009ZX02101-4),and Analysis&Test Fund of Nanjing University.T.Al-Kassab acknowledges the generous support of the KAUST baseline funds.
0.67BiFeO_(3)-0.33BaTiO_(3)multiferroic ceramics doped with x mol%MnO_(2)(x=2-10)were synthesized by solid-state reaction.The formation of a perovskite phase with rhombohedral symmetry was confirmed by X-ray diffracti...
关键词：multiferroic ceramics dielectric properties Raman spectra microstructure 
Multiferroic ZnO obtained by substituting oxygen with nitrogen
《Chinese Physics B》2011年第8期425-428,共4页徐庆宇 温峥 高锦龙 吴迪 邱腾 唐少龙 徐明祥 
Project supported by the National Natural Science Foundation of China (Grant Nos. 50802041 and 50872050);the National Key Basic Research Program of China (Grant Nos. 2009CB929503 and 2010CB923404);NCET-09-0296 and Southeast University,and partially supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2010421)
N-doped ZnO films were prepared in nitrogen plasma by pulsed laser deposition. Clear room temperature ferro- magnetism has been observed in the film prepared at a substrate temperature of 500 ℃. The structural charac...
关键词：MULTIFERROICS diluted magnetic semiconductor ZNO 
Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks被引量：1
《Journal of Materials Science & Technology》2009年第3期289-313,共25页Xinhua Zhu Jian-min Zhu Aidong Li Zhiguo Liu Naiben Ming 
support from Natural Science Foundation of Jiangsu Province (ProjectNo. BK2007130);National Natural Science Foundation of China (Grant Nos. 10874065, 60576023 and 60636010);Ministry of Science and Technology of China (Grant No.2009CB929503);Ministry of Science and Technology of China (Grant Nos. 2009CB929503 and2009ZX02101-4);the project sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry;National Found for Fostering Talents of Basic Science (NFFTBS) (ProjectNo. J0630316)
The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because...
关键词：High-k gate dielectrics Metal gate electrodes  CMOS gate stack HRTEM STEM 
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