云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2006CB302700)

国家重点基础研究发展计划(2006CB302700): 作品数：21被引量：30H指数：3; 导出分析报告; 相关作者：宋志棠刘波封松林余志平冯高明更多>>; 相关机构：中国科学院清华大学哈佛大学明尼苏达大学更多>>; 相关期刊：《清华大学学报（自然科学版）》《半导体技术》《Chinese Physics B》《Chinese Physics Letters》更多>>; 相关主题：相变存储器电学性能DEVICESCMOS带隙基准互补金属氧化物半导体更多>>; 相关领域：电子电信自动化与计算机技术理学化学工程更多>>

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid: 《Chinese Physics B》2011年第3期497-504,共8页王良咏刘波宋志棠刘卫丽封松林黄丕成 S.V Babu; supported by the Center for Advanced Materials Processing (CAMP) at Clarkson University;the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-3);the National Basic Research Program of China (GrantNos. 2007CB935400,2010CB934300 and 2006CB302700);the National High Technology Development Program of China (GrantNo. 2008AA031402);the Science and Technology Council of Shanghai,China (Grant Nos. 08DZ2200700,08JC1421700 and09QH1402600);the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists; We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with pi...; 关键词：chemical mechanical polishing CERIA oxide over nitride selectivity ORIGIN

A Compact Spice Model with Verilog-A for Phase Change Memory: 《Chinese Physics Letters》2011年第1期212-214,共3页CAI Dao-Lin SONG Zhi-Tang LI Xi CHEN Hou-Peng CHEN Xiao- Gang; A compact spice model of the phase change memory with the crystalline fraction as the switching by Verilog-A language is proposed and demonstrated. The model can simulate not only the resistance change by the differen...; 关键词：Electronics and devices

Effect of ammonium molybdate concentration on chemical mechanical polishing of glass substrate: 《Journal of Semiconductors》2010年第11期136-139,共4页张泽芳刘卫丽宋志棠; Project supported by the National Integrated Circuit Research Program of China(No.2009ZX02030-001);the Science and Technology Council of Shanghai,China(Nos.08111100300,08111100303,0952nm00200);the Shanghai Rising Star Program of China (No.07QH14017);the National Basic Research Program of China(Nos.2007CB935400,2010CB934300,2006CB302700);the National High Technology Research and Development Program of China(No.2008AA031402); The effect of the ammonium molybdate concentration on the material removal rate（MRR） and surface quality in the preliminary chemical mechanical polishing（CMP） of a rough glass substrate was investigated using a si...; 关键词：ammonium molybdate chemical mechanical polishing glass substrate coefficient of friction

Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming: 《Chinese Physics Letters》2010年第10期186-189,共4页陈一峰宋志棠陈小刚刘波徐成冯高明王良咏钟曼封松林; A phase change memory （PCM） device, based on the Ge2Sb2Te5 （GST） material, is fabricated using the standard 0.18-μm CMOS technology. After serials of detailed experiments on the phase transition behaviors, we fin...

A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices: 《Journal of Semiconductors》2010年第10期52-56,共5页祝鹏潘立阳古海明谯凤英邓宁许军; Project supported by the National Basic Research Program of China(No.2006CB302700);the National Natural Science Foundation of China(No.60876076);the National Key Scientific and Technological Project of China(No.2009ZX02023-5-3); A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is ...; 关键词：charge pumping trapped charge distribution localized VT

Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array: 《Journal of Semiconductors》2010年第10期57-61,共5页古海明潘立阳祝鹏伍冬张志刚许军; Project supported by the National Basic Research Program of China(No.2006CB302700); In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device, this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory （NUC-CTM） device with virtua...; 关键词：multi-bit storage non-uniform channel charge trapping memory NAND array SiON layer

Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials: 《Chinese Physics Letters》2010年第8期246-249,共4页龚岳峰宋志棠凌云刘燕李宜瑾封松林; Simulation of the heat consumption in phase change random access memories （PCRAMs） is investigated by a three-dimensional finite element model. It is revealed that the thermal conductivity and electrical conductivit...

Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling被引量：1: 《Chinese Physics Letters》2010年第6期250-253,共4页GONG Yue-Feng SONG Zhi-Tang LING Yun LIU Yan LI Yi-Jin; A three-dimensional finite element model for phase change random access memory is established to simulate electric, thermal and phase state distribution during （SET） operation. The model is applied to simulate the S...

相变存储器中驱动二极管之间串扰电流的分析与减小方法: 《电子器件》2010年第3期271-274,共4页李宜瑾凌云宋志棠龚岳峰罗胜钦贾晓玲; 国家集成电路重大专项资助(2009ZX02023-3);国家重点基础研究发展计划资助(2007CB935400,2010CB934300,2006CB302700);国家863计划资助(2008AA031402);上海市科委资助(08DZ2200700,08JC1421700,09QH1402600);中科院“院长特别奖获得者科研启动专项资金”资助(083YQA1001); 由于二极管在单元尺寸上的优势,被认为是高密度相变存储器中驱动管的不二之选。如果制备二极管的工艺参数不恰当,则大的漏电流会影响PCRAM存储数据的准确性和长久的保持力。首先简要介绍了具有自主知识产权的相变存储器中驱动二极管阵...; 关键词：相变存储器驱动二极管串扰电流 TCAD

基于AGC方法的软判决LDPC译码器输入匹配电路: 《电路与系统学报》2009年第6期91-95,共5页张建良张盛王硕邱见明周润德; 973国家重点基础研究发展项目(2006CB302700); 针对低密度奇偶校验码(LDPC)译码器性能受输入软信息电平抖动影响较大的问题,本文提出一种基于自动增益控制(AGC)方法的输入匹配电路,能够跟踪输入的信号电平变化动态调整信号幅度,使解调器与LDPC译码器始终工作在最佳匹配状态。此方法...; 关键词：放大整形电路自动增益控制软判决低密度奇偶校验码超宽带

国家重点基础研究发展计划(2006CB302700)