国家自然科学基金(s61036004)

作品数：8被引量：9H指数：2
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A capacitor-free high PSR CMOS low dropout voltage regulator
《Journal of Semiconductors》2014年第6期109-113,共5页李志超 刘云涛 旷章曲 陈杰 
Project supported by the National Natural Science Foundation of China(Nos.61036004,61234003,61221004)
This paper presents a capacitor-free CMOS low dropout voltage regulator which has high PSR perfor- mance and low chip area. Pole splitting and gm boosting techniques are employed to achieve good stability. The capacit...
关键词：CMOS low dropout regulator power supply rejection CAPACITOR-FREE 
A dynamic range extension scheme applied to a TDI CMOS image sensor
《Journal of Semiconductors》2014年第2期86-91,共6页徐超 姚素英 徐江涛 高志远 韩立镪 
Project supported by the National Natural Science Foundation of China(Nos.61036004,61076024)
A dynamic range extension scheme applied to a time delay integration （TDI） CMOS image sensor （CIS） is presented. Two types of pixels with higher and lower conversion gain are adopted in the pixel array, which are ...
关键词：CMOS image sensor time delay integration dynamic range extension digital domain 
Analysis of incomplete charge transfer effects in a CMOS image sensor被引量：2
《Journal of Semiconductors》2013年第5期90-95,共6页韩立镪 姚素英 徐江涛 徐超 高志远 
supported by the National Natural Science Foundation of China(Nos.61036004,61076024)
Abs A method to judge complete charger transfer is proposed for a four-transistor CMOS image sensor with a large pixel size. Based on the emission current theory, a qualitative photoresponse model is established to th...
关键词：CMOS image sensor charge transfer pinned photodiode NONLINEARITY shot noise 
Charge transfer efficiency improvement of a 4-T pixel by the optimization of electrical potential distribution under the transfer gate被引量：2
《Journal of Semiconductors》2012年第12期31-36,共6页李毅强 李斌桥 徐江涛 高志远 徐超 孙羽 
Project supported by National Natural Science Foundation of China(Nos.61036004,61076024)
The charge transfer efficiency improvement method is introduced by optimizing the electrical potential distribution under the transfer gate along the charge transfer path. A non-uniform doped transfer transistor chan-...
关键词：CMOS image sensor charge transfer efficiency non-uniform doped transfer transistor channel potential barrier potential pocket 
Full well capacity and quantum efficiency optimization for small size backside illuminated CMOS image pixels with a new photodiode structure被引量：4
《Journal of Semiconductors》2012年第12期42-48,共7页孙羽 张平 徐江涛 高志远 徐超 
Project supported by the National Natural Science Foundation of China(Nos.61036004,60976030)
To improve the full well capacity （FWC） of a small size backside illuminated （BSI） CMOS image sensor （CIS）, the effect of photodiode capacitance （Cpo） on FWC is studied, and a reformed pinned photodiode （PPD...
关键词：backside illuminated CMOS image sensor PHOTODIODE full well capacity quantum efficiency small size pixel 
Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage
《Journal of Semiconductors》2012年第11期72-78,共7页徐新楠 姚素英 徐江涛 聂凯明 
supported by the National Natural Science Foundation of China(Nos.61036004,61076024)
A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed.This structure is based on associating two sets of two capacitors in cross series during the amplificat...
关键词：multiply-by-two amplifier mismatch-insensitive amplifier full swing switched-capacitor circuits 
An SEU-hardened latch with a triple-interlocked structure被引量：1
《Journal of Semiconductors》2012年第8期89-96,共8页李渊清 姚素英 徐江涛 高静 
Project supported by the National Natural Science Foundation of China(Nos.61036004,61076024)
A single event upset （SEU） tolerant latch with a triple-interlocked structure is presented. Its self-recovery mechanism is implemented by using three pairs of guard-gates and inverters to construct feedback lines in...
关键词：single event upset single event transient LATCH triple-interlocked fault injection CROSSTALK 
Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants被引量：2
《Journal of Semiconductors》2011年第12期91-94,共4页李伟平 徐江涛 徐超 李斌桥 姚素英 
Project supported by the National Natural Science Foundation of China(Nos.61036004,60976030)
In order to increase collection efficiency and eliminate image lag, multi n-type implants were introduced into the process of a pinned-photodiode. For the purpose of improving the collection efficiency, multi n-type i...
关键词：CMOS image sensor PHOTODIODE collection efficiency charge transfer image lag 
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