国家教育部博士点基金(20060001018)

作品数:3被引量:0H指数:0
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相关作者:韩奎唐宁沈波更多>>
相关机构:北京大学更多>>
相关期刊:《Chinese Physics B》《微纳电子技术》更多>>
相关主题:磁输运GAN异质结构GAN-BASEDGANELECTRICAL更多>>
相关领域:理学电子电信更多>>
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Optimization of a solar-blind and middle infrared two-colour photodetector using GaN-based bulk material and quantum wells
《Chinese Physics B》2009年第12期5366-5369,共4页岑龙斌 沈波 秦志新 张国义 
Project supported by the National Natural Science Foundation of China (Grant Nos 60806042,10774001,60736033,60890193 and60628402);National Basic Research Program of China (Grant Nos 2006CB604908 and 2006CB921607);the Research Fundfor the Doctoral Program of Higher Education of China (Grant Nos 200800011021 and 20060001018)
This paper calculates the wavelengths of the interband transitions as a function of the Al mole fraction of AlxGa1-xN bulk materml. It is finds that when the Al mole fraction is between 0.456 and 0.639, the wavelength...
关键词:quantum well two-colour detector intersubband transition 
Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells
《Chinese Physics B》2009年第9期3905-3908,共4页岑龙斌 沈波 秦志新 张国义 
supported by the National Natural Science Foundation of China (Grant Nos 60806042,10774001,60736033,60890193 and 60628402);National Basic Research Program of China (Grant Nos 2006CB604908 and 2006CB921607);the Research Fund for the Doctoral Program of Higher Education in China (Grant Nos 200800011021 and 20060001018);Beijing Natural Science Foundation (Grant No 4062017)
The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical A1N/GaN coupled double quantum wells (CDQWs) has been investigated by solving SchrSdinger and Poisson equa...
关键词:A1N/GaN CDQWs electrical-optical modulator intersubband transition 
Al_xGa_(1-x)N/GaN异质结构中二维电子气的自旋性质
《微纳电子技术》2009年第2期65-69,共5页唐宁 沈波 韩奎 
国家重点基础研究发展规划项目(2006CB604908;2006CB921607);国家自然科学基金(60806042;10774001;60736033;60628402);教育部博士点基金(20060001018);北京市自然科学基金(4062017)
Ⅲ族氮化物材料有很长的电子自旋弛豫时间以及很高的居里温度,成为近年来半导体自旋电子学研究的重要材料体系之一。介绍了目前两种最主要的研究AlxGa1-xN/GaN异质结构中二维电子气(2DEG)自旋性质的物理效应:磁电阻的舒伯尼科夫-德哈斯...
关键词:Ⅲ族氮化物半导体 异质结构 二维电子气 自旋 磁输运 
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