Project supported by the National Basic Research Program of China(Grant Nos.2013CB933304 and 2012CB932701);the National Natural Science Foundation of China(Grant Nos.61274125 and 61435012);the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200)
In this study, two-section mode-locked semiconductor lasers with different numbers of quantum wells and different types of waveguide structures are made. Their ultrashort pulse features are presented. The spectral dyn...
Project supported by the National Basic Research Program of China(Grant Nos.2014CB643903,2013CB932904,2012CB932701,and 2011CB922201);the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005);the National Natural Science Foundation of China(Grant Nos.61274013,U1037602,61306013,and 61290303);the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200);China Postdoctoral Science Foundation(Grant No.2014M561029)
In this paper we focused on the mask technology of inductively coupled plasma(ICP) etching for the mesa fabrication of infrared focal plane arrays(FPA).By using the SiO_2 mask,the mesa has higher graphics transfer...
Project supported by the National Basic Research Program of China(Grant Nos.2013CB932904,2012CB932701,2011CB922201,and 2010CB327600);the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005);the National Natural Science Foundation of China(Grant Nos.61274013,U1037602,and 61290303)
The GaSb-based laser shows its superiority in the 3-4 ~tm wavelength range. However, for a quantum well (QW) laser structure of InGaAsSb/AIGaInAsSb multiple-quantum well (MQW) grown on GaSb, uniform content and hi...
supported by the National Natural Science Foundation of China(Nos.U1037602,61274013,61290303);the National Basic Research Program of China(Nos.2010CB327602,2012CB932701,2013CB932904)
We present the fabrication of a mid-wavelength infrared focal plane array (FPA) based on type-II InAs/GaSb strain layer superlattices (SLs). The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, ...
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176012 and 90921015);the National Basic Research Program of China (Grant Nos. 2010CB327601 and 2012CB932701);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20080440507)
The solar spectrum covers a broad wavelength range, which requires that antireflection coating (ARC) is effective over a relatively wide wavelength range for more incident light coming into the cell. In this paper, ...