《Journal of Semiconductors》

作品数：9341被引量：11403H指数：23
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《Journal of Semiconductors》
主办单位：中国电子学会;中国科学院半导体研究所
最新期次：2025年4期更多>>
发文主题：CMOS硅GAAS砷化镓GAN更多>>
发文领域：电子电信理学自动化与计算机技术电气工程更多>>
发文作者：郝跃曾一平王占国王阳元刘新宇更多>>
发文机构：中国科学院清华大学复旦大学北京大学更多>>
发文基金：国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划国家教育部博士点基金更多>>
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Preface to Special Topic on Quantum Dot Semiconductor Optoelectronic Materials,Devices,and Characterization
《Journal of Semiconductors》2025年第4期2-3,共2页Zeke Liu Wanli Ma 
The discovery and synthesis of colloidal quantum dots(QDs)were awarded the 2023 Nobel Prize in Chemistry.QDs,as a novel class of materials distinct from traditional molecular materials and bulk materials,have rapidly ...
关键词：surface chemical engineering techniques quantum dots class materials molecular materials colloidal quantum dots colloidal quantum dots qds REGULATE optoelectronic applications 
A leap forward in compute-in-memory system for neural network inference
《Journal of Semiconductors》2025年第4期5-7,共3页Liang Chu Wenjun Li 
Developing efficient neural network(NN)computing systems is crucial in the era of artificial intelligence(AI).Traditional von Neumann architectures have both the issues of"memory wall"and"power wall",limiting the data...
关键词：neural network von neumann architectures compute memory INFERENCE MEMRISTOR artificial intelligence ai traditional memristor crossbarsare analogue cim 
GaN-based blue laser diodes with output power of 5 W and lifetime over 20000 h aged at 60℃
《Journal of Semiconductors》2025年第4期9-11,共3页Lei Hu Siyi Huang Zhi Liu Tengfeng Duan Si Wu Dan Wang Hui Yang Jun Wang Jianping Liu 
supported by the Natural Science Foundation of Jiangsu Province(Grant.BK20232042).
Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LED...
关键词：Blue laser diodes P type doping LIFETIME Output power Stimulated emission GAN based laser diodes stimulated emission lasing laser diodes lds 
Journal of Semiconductors Editoriall Board
《Journal of Semiconductors》2025年第4期F0002-F0002,共1页
Wide-bandgap and heavy-metal-free quantum dots for blue light-emitting diodes
《Journal of Semiconductors》2025年第4期13-27,共15页Xin Gu Wen-Long Fei Bao-Quan Sun Ya-Kun Wang Liang-Sheng Liao 
supported by the National Key Research and Development Program of China(2024YFE0103600);the National Natural Science Foundation of China(NSFC)(62474119,62205230,and 62175171);Suzhou Key Laboratory of Functional Nano&Soft Materials,Collaborative Innovation Center of Suzhou Nano Science&Technology,the 111 Project,Joint International Research Laboratory of Carbon-Based Functional Materials and Devices.
Colloidal quantum dots(CQDs)are highly regarded for their outstanding photovoltaic characteristics,including excellent color purity,stability,high photoluminescence quantum yield(PLQY),narrow emission spectra,and ease...
关键词：blue quantum dot light-emitting diodes heavy-metal-free Ⅱ−Ⅵquantum dots Ⅲ−Ⅴquantum dots carbon dots 
Advances in perovskite lasers
《Journal of Semiconductors》2025年第4期29-36,共8页Zhicheng Guan Hengyu Zhang Guang Yang 
Perovskite materials have emerged as promising candidates for various optoelectronic applications owing to their remarkable optoelectronic properties and easy solution processing.Metal halide perovskites,as direct-ban...
关键词：perovskites LASERS OPTOELECTRONICS 
Colloidal synthesis of lead chalcogenide/lead chalcohalide core/shell nanostructures and structural evolution
《Journal of Semiconductors》2025年第4期38-44,共7页Yang Liu Kunyuan Lu Yujie Zhu Xudong Hu Yusheng Li Guozheng Shi Xingyu Zhou Lin Yuan Xiang Sun Xiaobo Ding Irfan Ullah Muhammad Qing Shen Zeke Liu Wanli Ma 
supported by the National Key Research and Development Program of China(Grant No.2022YFE0110300);the National Natural Science Foundation of China(Grant Nos.52372215,92163114,and 52202274);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20230504);the Special Fund for the"Dual Carbon"Science and Technology Innovation of Jiangsu province(Industrial Prospect and Key Technology Research program)(Grant Nos.BE2022023 and BE2022021);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant No.21KJA430004);Gusu Innovation and Entre preneurship Leading Talent Program(Grant No.ZXL2022451);the China Postdoctoral Science Foundation(Grant No.2023M732523);supported by Suzhou Key Laboratory of Functional Nano&Soft Materials,Collaborative Innovation Center of Suzhou Nano Science&Technology,the 111 Project.
Lead chalcohalides(PbYX,X=Cl,Br,I;Y=S,Se)is an extension of the classic Pb chalcogenides(PbY).Constructing the heterogeneous integration with PbYX and PbY material systems makes it possible to achieve significantly im...
关键词：lead chalcohalides lead chalcogenides PbS nanocrystal core/shell structure Pb_(3)S_(2)X_(2)nanocrystal 
Layer-dependent optical and dielectric properties of CdSe semiconductor colloidal quantum wells characterized by spectroscopic ellipsometry
《Journal of Semiconductors》2025年第4期46-53,共8页Chenlin Wang Haixiao Zhao Xian Zhao Baoqing Sun Jie Lian Yuan Gao 
supported by the National Natural Science Foundation of China(62205180);the Natural Science Foundation of Shandong Province(ZR2022QF029);the Taishan Scholar Program of Shandong Province(Young Scientist).
Semiconductor colloidal quantum wells(CQWs)with atomic-precision layer thickness are rapidly gaining attention for next-generation optoelectronic applications due to their tunable optical and electronic properties.In ...
关键词：CdSe CQWs bandgap spectroscopic ellipsometry monolayer number exciton binding energy 
Size matters:quantum confinement-driven dynamics in CsPbI_(3)quantum dot light-emitting diodes
《Journal of Semiconductors》2025年第4期55-61,共7页Shuo Li Wenxu Yin Weitao Zheng Xiaoyu Zhang 
support from the National Key Research and Development Program of China(2024YFA1207700);National Natural Science Foundation of China(52072141,52102170).
The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investiga...
关键词：quantum confinement effect CsPbI_(3) quantum dot light-emitting diode 
Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells
《Journal of Semiconductors》2025年第4期63-70,共8页Napasuda Wichaiyo Yuyao Wei Chao Ding Guozheng Shi Witoon Yindeesuk Liang Wang Huān Bì Jiaqi Liu Shuzi Hayase Yusheng Li Yongge Yang Qing Shen 
supported by MEXT KAKENHI Grant(24K01295,26286013).
Traditional p-type colloidal quantum dot(CQD)hole transport layers(HTLs)used in CQD solar cells(CQDSCs)are commonly based on organic ligands exchange and the layer-by-layer(LbL)technique.Nonetheless,the ligand detachm...
关键词：quantum dot solar cells hole transport layer PBS p-type ink inorganic ligands 
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