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作品数：379被引量：761H指数：15
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Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains
《Chinese Physics B》2023年第4期504-510,共7页蔡莉 池雅庆 叶兵 刘郁竹 贺泽 王海滨 孙乾 孙瑞琪 高帅 胡培培 闫晓宇 李宗臻 刘杰 
Project supported by the National Natural Science Foundation of China(Grant Nos.12035019,12105339,and62174180);the Opening Special Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,China(Grant No.SKLIPR2113)。
The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured a...
关键词：heavy ion single event effect single event transient Fin FET inverter chain 
Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology被引量：1
《Chinese Physics B》2021年第7期591-594,共4页Shuang Sun Jian-Huan Wang Bao-Tong Zhang Xiao-Kang Li Qi-Feng Cai Xia An Xiao-Yan Xu Jian-Jun Zhang Ming Li 
the National Key Research and Development Program of China(Grant No.2016YFA0200504);the National Natural Science Foundation of China(Grant No.61927901)。
A high quality epitaxial Si layer by molecular beam epitaxy(MBE)on Si(001)substrates was demonstrated to fabricate a channel with low density defects for high-performance Fin FET technology.In order to study the effec...
关键词：sub-10 nm fin molecular beam epitaxy defects mobility 
High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing
《Chinese Physics B》2020年第8期441-444,共4页Ying Zan Yong-Liang Li Xiao-Hong Cheng Zhi-Qian Zhao Hao-Yan Liu Zhen-Hua Hu An-Yan Du Wen-Wu Wang 
the Beijing Municipal Natural Science Foundation,China(Grant No.4202078);the National Key Project of Science and Technology of China(Grant No.2017ZX02315001-002).
A high crystalline quality of SiGe fin with an Si-rich composition area using the replacement fin processing is systematically demonstrated in this paper.The fin replacement process based on a standard FinFET process ...
关键词：SIGE selective epitaxial growth FINFET replacement fin processing 
Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
《Chinese Physics B》2018年第4期432-436,共5页Ting-Ting Liu Kai Zhang Guang-Run Zhu Jian-Jun Zhou Yue-Chan Kong Xin-Xin Yu Tang-Sheng Chen 
Project supported by the National Natural Science Foundation of China(Grant Nos.61504125,61474101,and 61505181)
We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long ...
关键词：AlGaN/GaNFinFETs output power density linearity characteristics 
Analytical capacitance model for 14 nm Fin FET considering dual-k spacer
《Chinese Physics B》2017年第7期338-345,共8页郑芳林 刘程晟 任佳琪 石艳玲 孙亚宾 李小进 
Project supported by the National Natural Science Foundation of China(Grant Nos.61574056 and 61204038);the Natural Science Foundation of Shanghai,China(Grant No.14ZR1412000)
The conformal mapping of an electric field has been employed to develop an accurate parasitic capacitance model for nanoscale fin field-effect transistor（Fin FET） device. Firstly, the structure of the dual-layer spa...
关键词：fin field-effect transistor parasitic capacitance model conformal mapping TCAD 
Optimization of fin geometry in heat convection with entransy theory
《Chinese Physics B》2013年第2期139-144,共6页程雪涛 张勤昭 徐向华 新刚 
Project supported by the National Natural Science Foundation of China (Grant No. 51106082);the Tsinghua University Initiative Scientific Research Program
The entransy theory developed in recent years is used to optimize the aspect ratio of a plate fin in heat convection.Based on a two-dimensional model,the theoretical analysis shows that the minimum thermal resistance ...
关键词：entransy dissipation thermal resistance heat convection optimization fin efficiency 
Three-dimensional Monte Carlo simulation of bulk fin field effect transistor
《Chinese Physics B》2012年第11期421-426,共6页王骏成 杜刚 魏康亮 张兴 刘晓彦 
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604)
In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanis...
关键词：bulk fin field effect transistor （FinFET） three-dimensional （3D） Monte Carlo simulation surface roughness scattering substrate bias effect 
Temperature and drain bias dependence of single event transient in 25-nm FinFET technology被引量：2
《Chinese Physics B》2012年第8期590-594,共5页秦军瑞 陈书明 李达维 梁斌 刘必慰 
Project supported by the State Key Program of the National Natural Science of China (Grant No. 60836004);the National Natural Science Foundation of China (Grant Nos. 61076025 and 60906014)
In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltag...
关键词：fin field-effect transistor single event transient temperature dependence drain bias dependence 
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