METAL-OXIDE

作品数:63被引量:105H指数:5
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相关领域:电子电信自动化与计算机技术更多>>
相关作者:刘继华王志功袁成李智群更多>>
相关机构:东南大学更多>>
相关期刊:《eScience》《Science China Materials》《Chinese Journal of Chemical Engineering》《Journal of Electronics(China)》更多>>
相关基金:国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金高等学校学科创新引智计划更多>>
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  • 期刊=Journal of Semiconductorsx
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Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors
《Journal of Semiconductors》2024年第10期54-59,共6页Xiao Li Zhikang Ma Jinxiong Li Wengao Pan Congwei Liao Shengdong Zhang Zhuo Gao Dong Fu Lei Lu 
supported by National Key Research and Development Program(2021YFB3600802);Shenzhen Municipal Scientific Program(JSGG20220831103803007,SGDX20211123145404006);Guangdong Basic and Applied Basic Research Foundation(2022A1515110029)
This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojun...
关键词:oxide semiconductor thin-film transistors two-dimensional electron gas HETEROJUNCTION high mobility 
Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems
《Journal of Semiconductors》2023年第9期3-10,共8页Runxiao Shi Tengteng Lei Zhihe Xia Man Wong 
supported by Grant RGC 16215720 from the Science and Technology Program of Shenzhen under JCYJ20200109140601691;Grant GHP/018/21SZ from the Innovation and Technology Fund;Grant SGDX20211123145404006 from the Science and Technology Program of Shenzhen;Fundamental and Applied Fundamental Research Fund of Guangdong Province 2021B1515130001。
Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of tu...
关键词:flexible electronics metal-oxide semiconductor thin-film transistor dual gate FLUORINATION analog front-end system sensors 
A 100 MS/s 9 bit 0.43 mW SAR ADC with custom capacitor array
《Journal of Semiconductors》2016年第5期84-89,共6页王晶晶 冯泽民 徐荣金 陈迟晓 叶凡 许俊 任俊彦 
Project supported by the National High-Tech Research and Development Program of China(No.2013AA014101)
A low power 9 bit 100 MS/s successive approximationregisteranalog-to-digitalconverter(SARADC) with custom capacitor array is presented. A brand-new 3-D MOM unit capacitor is used as the basic capacitor cell of this ...
关键词:SAR ADC low power custom metal-oxide-metal capacitor capacitor array structure 
An efficient method for comprehensive modeling and parasitic extraction of cylindrical through-silicon vias in 3D ICs被引量:1
《Journal of Semiconductors》2015年第8期150-156,共7页姚蔷 叶佐昌 喻文健 
supported by the National Natural Science Foundation of China(No.61422402);the Tsinghua University Initiative Scientific Research Program
To build an accurate electric model for through-silicon vias (TSVs) in 3D integrated circuits (ICs), a resistance and capacitance (RC) circuit model and related efficient extraction technique are proposed. The c...
关键词:3D IC through silicon via (TSV) parasitic extraction floating random walk algorithm metal-oxide- semiconductor (MOS) capacitance 
A capacitive DAC with custom 3-D 1-fF MOM unit capacitors optimized for fastsettling routing in high speed SAR ADCs
《Journal of Semiconductors》2015年第5期158-162,共5页陈迟晓 向济璇 陈华斌 许俊 叶凡 李宁 任俊彦 
Asynchronous successive approximation register (SAR) analog-to-digital converters (ADC) feature high energy efficiency but medium performance. From the point of view of speed, the key bottleneck is the unit ca- pa...
关键词:metal-oxide-metal capacitor SAR analog-to-digital convertors digital-to-analog convertors 
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