supported by National Key Research and Development Program(2021YFB3600802);Shenzhen Municipal Scientific Program(JSGG20220831103803007,SGDX20211123145404006);Guangdong Basic and Applied Basic Research Foundation(2022A1515110029)
This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojun...
supported by Grant RGC 16215720 from the Science and Technology Program of Shenzhen under JCYJ20200109140601691;Grant GHP/018/21SZ from the Innovation and Technology Fund;Grant SGDX20211123145404006 from the Science and Technology Program of Shenzhen;Fundamental and Applied Fundamental Research Fund of Guangdong Province 2021B1515130001。
Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of tu...
Project supported by the National High-Tech Research and Development Program of China(No.2013AA014101)
A low power 9 bit 100 MS/s successive approximationregisteranalog-to-digitalconverter(SARADC) with custom capacitor array is presented. A brand-new 3-D MOM unit capacitor is used as the basic capacitor cell of this ...
supported by the National Natural Science Foundation of China(No.61422402);the Tsinghua University Initiative Scientific Research Program
To build an accurate electric model for through-silicon vias (TSVs) in 3D integrated circuits (ICs), a resistance and capacitance (RC) circuit model and related efficient extraction technique are proposed. The c...
Asynchronous successive approximation register (SAR) analog-to-digital converters (ADC) feature high energy efficiency but medium performance. From the point of view of speed, the key bottleneck is the unit ca- pa...