NUCLEATION

作品数:587被引量:1000H指数:12
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相关领域:一般工业技术金属学及工艺更多>>
相关作者:王春广章自寿麦堪成丁茜姚妍更多>>
相关机构:中山大学中南大学中国科学院北京科技大学更多>>
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相关基金:国家自然科学基金国家重点基础研究发展计划中国博士后科学基金高等学校学科创新引智计划更多>>
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Nucleation, Growth, and Aggregation of Au Nanocrystals on Liquid Surfaces被引量:1
《Chinese Physics Letters》2020年第2期74-77,共4页Lu Li Zhi-Long Bao Xun-Heng Ye Jia-Wei Shen Bo Yang Gao-Xiang Ye Xiang-Ming Tao 
the National Natural Science Foundation of China under Grant No.11374082。
We report the formation of gold ramified aggregates after deposition of Au on an ionic liquid surface by thermal evaporation method at room temperature.It is observed that the aggregates are composed of both granules ...
关键词:temperature. NOMINAL HEXAGONAL 
Controllable Nucleation of Nanobubbles at a Modified Graphene Surface
《Chinese Physics Letters》2015年第4期77-80,共4页马旺国 张萌 聂雪川 王春雷 方海平 贺梦冬 张立娟 
Support by the National Natural Science Foundation of China under Grant Nos 11079050,11174372,11290165 and 11305252;the Program of the Chinese Academy of Sciences under Grant Nos KJCX2-EW-W09 and KJZD-EW-M03
The properties of nanoscale gas bubbles at the solid/water interface have been investigated for more than 20 years. However, the stability of nanobubbles remains far from being understood. How to control the formation...
关键词:Controllable Nucleation of Nanobubbles at a Modified Graphene Surface 
Dislocation Dissociation Strongly Influences on Frank-Read Source Nucleation and Microplasticy of Materials with Low Stacking Fault Energy被引量:1
《Chinese Physics Letters》2014年第4期96-99,共4页HUANG Min-Sheng 
Supported by the National Natural Science Foundation of China under Grant Nos 11272128 and 11072081, and the Fundamental Research Funds for Central Universities under Grant No 2012QN024.
The influence of dislocation dissociation on the evolution of Frank-Read (F-R) sources is studied using a three- dimensional discrete dislocation dynamics simulation (3D-DDD). The classical Orowan nucleation stres...
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
《Chinese Physics Letters》2011年第6期333-336,共4页WU Meng ZENG Yi-Ping WANG Jun-Xi HU Qiang 
A low-temperature GaN(LT-GaN)nucleation layer is grown on a patterned sapphire substrate(PSS)using metal-organic chemical vapor deposition(MOCVD).The surface morphology of the LT-GaN is investigated and the selective ...
关键词:GAN SAPPHIRE MOCVD 
Nucleation of Micro Crack for Brittle Fracture in Magnetic Field
《Chinese Physics Letters》2010年第10期172-174,共3页刘兆龙 胡海云 范天佑 邢修三 
The nature of spin-state phase transition is investigated with [Fe(C4H4N2){Pt(CN)4}] that is a novel 3D Hofmann—like compound. The bistability of this system is obtained by the first-principles calculation. It is...
Improvement of A1N Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy
《Chinese Physics Letters》2010年第5期247-249,共3页张辰 郝智彪 任凡 胡健楠 罗毅 
Supported by the National Natural Science Foundation of China under Grant Nos 60536020 and 60723002, the National Basic Research Program of China under Grant Nos 2006CB302800 and 2006CB921106, the National High-Technology Research and Development Program of China under Grant No 2006AA03A105, and Major Project of Beijing Municipal Science and Technology Commission (No D0404003040321).
The influence of nucleation coalescence on the crystalline quality of A1N films grown on sapphire by plasma- assisted molecular beam epitaxy is investigated. The coalescence speed is controlled by the V/Ⅲ ratio chose...
Fabrication of Two-Dimensional Arrays of Micron-Sized Gold Rings Based on Preferential Nucleation at Reentrant Sites
《Chinese Physics Letters》2008年第8期2957-2960,共4页董雯 郭祥 王斯祯 王振林 闵乃本 
Supported by the National Basic Research Programme of China, the National Natural Science Foundation of China under Grant Nos 50771054, 10734010 and 10425415, the Natural Science Foundation of Jiangsu Education Committee under Grant No 07KJBI40098, and the NSFJPe under Grant No BK2006716.
A templating method for fabricating two-dimensional (2D) arrays of micron-sized goM rings is reported. The microstructures are formed by electroless plating in a through-porous polymer membrane on a silicon substrat...
关键词:the power-law exponents precipitation durative abrupt precipitation change 
Vapour-to-Liquid Nucleation in Associating Lennard-Jones Fluids with Multiple Association Sites
《Chinese Physics Letters》2007年第10期2804-2807,共4页付东 廖涛 
Supported by the National Natural Science Foundation of China under Grant Nos 20576030 and 20606009, the Programme for New Century Excellent Talents in University under Grant No 06-0206, and the Research Fund of Key Lab for Nanomaterials, Ministry of Education of China under Grant No 2006-2.
The excess Helmholtz free energy functional for associating Lennard-Jones (L J) fluid is formulated in terms of a weighted density approximation for short-ranged interactions and a Weeks-Chandler-Andersen approximat...
关键词:coated conductor buffer layer self-epitaxy CEO2 
A Novel Kinetic Model of Liquid Nitrogen's Explosive Boiling at the Initial Stage
《Chinese Physics Letters》2007年第9期2613-2616,共4页淮秀兰 董兆一 李志刚 尹铁男 邹玉 
Supported by the National Natural Science Foundation of China under Grant No 50576099, the Hi-Tech Research and Development Programme of China under Grant No 2006AA05Z203, and the Institute of Engineering Thermophysics, Chinese Academy of Sciences.
The liquid nitrogen's explosive boiling characteristics under transient high heat flux have attracted increasing attentions of researchers over the world due to its wide applications. Although some experiments have b...
关键词:NUCLEATION 
Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time
《Chinese Physics Letters》2007年第6期1645-1648,共4页周忠堂 邢志刚 郭丽伟 陈弘 周均铭 
Supported by the Knowledge Innovation Programme of Chinese Academy of Sciences, the National Natural Science Foundation of China under Grant Nos 10474126 and 10574148, and the National Key Basic Research Programme of China under Grant No 2002CB311900.
Semi-insulating (SI) GaN is grown using N2 as the nucleation layer (NL) carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL ca...
关键词:UNINTENTIONALLY DOPED GAN FILMS DISLOCATIONS BUFFER 
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