This work was funded by Hundred Talents Program of Fujian Province and the National Natural Science Foundation of China (No. 61774158), and the Natural Science Foundation of Fujian Province (No. 2018J01110).
Simultaneous epitaxial growth of film and nanowire array on a substrate is of both scientific significance and practical importance for nanoscale optoelectronics. Nevertheless, in situ building conducting connection b...
In the present paper that considers the possibility for modification of equation of state for a non-polar gas in a closed thermally-insulated capacitor and, consequently, the possibility for changing the temperature a...
Supported by the National Natural Science Foundation of China under Grant No 61204006;the Fundamental Research Funds for the Central Universities under Grant No K50511250002
Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy a...
supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900);High Technology Research Program of China (Grant No. 2009AA03A198);the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003);the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China
The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomi...
Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028);the National Basic Research Program of China (Grant No. 2007CB307004);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018)
Non-polar a-plane (1120) GaN films have been grown on r-plane (1102) sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...
Project (No. 60078001) supported by the National Natural ScienceFoundation of China
The separation between s- and p-polarization components invariably affects thin film edge filters used for tilted incidence and is a difficult problem for many applications, especially for optical communication. This ...