云南高校图书馆联盟文献共享服务平台- SUBMICRON

SUBMICRON: 作品数：139被引量：261H指数：9; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李青松王志强赵辉聂刚韩小彦更多>>; 相关机构：清华大学东南大学中国石油大学（华东）中南民族大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>

Nonlinear Raman-Nath diffraction in submicron-thick periodically poled lithium niobate thin film: 《PhotoniX》2024年第1期15-33,共19页Xiao-Ni Li Ling-Zhi Peng Yuan-Yuan Liu Li-Hong Hong De-Ming Hu Yuan-Yuan Zhao Xuan-Ming Duan Bao-Qin Chen Zhi-Yuan Li; support from Science and Technology Project of Guangdong(2020B010190001);National Natural Science Foundation of China(11974119);Guangzhou Science and Technology Plan Project(2023A04J1309).; Nonlinear Raman-Nath diffraction(NRND)is a unique diffraction pattern formed when a high-intensity laser interacts with a nonlinear microstructure bulky medium relying only on the transverse phase matching condition.H...; 关键词：NONLINEAR Second harmonic generation Periodically poled lithium niobate thin film Raman-Nath diffraction

Forced boiling of nonazeotropic immiscible mixture in a supercapillary microchannel array for ultra-high heat flux removal with chip junction temperature below 85℃: 《Science China(Technological Sciences)》2024年第5期1364-1380,共17页SUN Bo BAO YuChen TIAN Tong LI Ji; supported by the National Natural Science Foundation of China(Grant No.51776195)。; In this study,a structure-optimized two-phase microchannel heat sink with sintered submicron nucleation sites was developed and tested.The copper-based microchannels had a rectangular cross-section with an equivalent ...; 关键词：MICROCHANNEL sintered powder coating submicron nucleation cavities nonazeotropic immiscible ultra-high heat flux

Flexible substrates enabled highly integrated patterns with submicron precision toward intrinsically stretchable circuits被引量：1: 《SmartMat》2022年第3期503-512,共10页Wenkun Lv Zhaoxin Liu Zheng Li Zhifei Han Yongrui Yang Qi Li Yali Qiao Yanlin Song; Beijing National Laboratory for Molecular Sciences,Grant/Award Numbers:BNLMSCXXM‐202005,2019BMS20003;National Natural Science Foundation of China,Grant/Award Number:2018YFA0703200;K.C.Wong Education Foundation,and China Postdoctoral Science Foundation,Grant/Award Number:2020M670466;External Cooperation Program of Chinese Academy of Sciences,Grant/Award Number:GJHZ201948;CAS‐VPST Silk Road Science Fund 2022,Grant/Award Number:121111KYSB20210006;National Key R&D Program of China,Grant/Award Numbers:52003276,22175185,52003273,51803217,51773206,91963212,51961145102,22002171。; Fabricating high integration density,high resolution,and intrinsically stretchable patterns by patterned technologies remain challenging.Template printing enabled high-precision patterned fabrication at a facile opera...; 关键词：flexible devices highly integrated patterns liquid metal alloys printed electronics stretchable electronics

Frequency equation for the submicron CMOS ring oscillator using the first order characterization: 《Journal of Semiconductors》2018年第5期64-69,共6页Aravinda Koithyar T.K.Ramesh; By utilizing the first order behavior of the device,an equation for the frequency of operation of the submicron CMOS ring oscillator is presented.A 5-stage ring oscillator is utilized as the initial design,with differ...; 关键词：ring oscillator stage delay SPICE model RC model second order effects

Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications: 《Journal of Semiconductors》2016年第4期39-43,共5页Nacereddine Lakhdar Brahim Lakehal; We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave...; 关键词：gate engineering GaAs MESFET cut-off frequency short channel effects（SCEs） work function modeling

Numerical simulation of modulation to incident laser by submicron to micron surface contaminants on fused silica被引量：1: 《Chinese Physics B》2016年第1期632-639,共8页杨亮向霞苗心向李莉袁晓东晏中华周国瑞吕海兵郑万国祖小涛; supported by the National Natural Science Foundation of China(Grant No.61178018);the Ph.D.Funding Support Program of Education Ministry of China(Grant No.20110185110007); Modulation caused by surface/subsurface contaminants is one of the important factors for laser-induced damage of fused silica. In this work, a three-dimensional finite-difference time-domain （3D-FDTD） method is empl...; 关键词：fused silica laser-induced damage particulate contaminants MODULATION

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices被引量：1: 《Journal of Semiconductors》2015年第11期39-43,共5页武唯康安霞谭斐冯慧陈叶华刘静静张兴黄如; The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are o...; 关键词：heavy ion displacement damages PDSOI performance degradation

Direct LED writing of submicron resist patterns： Towards the fabrication of individually-addressable InGaN sub-micron stripe-shaped LED arrays: 《Nano Research》2014年第12期1849-1860,共12页Zheng Gong Benoit Guilhabert Zhitao Chen Martin D. Dawson; Submicron stripe-shaped InGaN light-emitting diode （LED） arrays with individually addressable capabilities are demonstrated. The critical submicron- stripe metallic electrodes, which define the emission pattern, are...; 关键词：direct writing light-emitting diodes electroluminescence efficiency droop mask-free lithography

Direct Laser Writing Facility for Fabrication of Submicron Mask: 《Chinese Physics Letters》2014年第4期185-188,共4页ZHU Feng MA Jian-Yong; Supported by the Ministry of Science and Technology of China under Grant No 2012YQ170004, and the National Natural Science Foundation of China under Grant No 61307064.; Direct laser writing technique has become a well-established, multi-functional and flexible method for fabricating high quality diffractive optical elements. We propose and build a maskless direct laser writing system...

Tunneling in submicron CMOS single-photon avalanche diodes被引量：2: 《Chinese Optics Letters》2014年第1期66-68,共3页Mohammad Azim Karami Armin Amiri-Sani Mohammad Hamzeh Ghormishi; Tunneling is studied in two main single-photon avalanche diode （SPAD） topologies, which are r^-tub guard ring （NTGR） and p-tub guard ring （PTGR）. Device sinmlation, I - V measurements, and dark count calculation...; 关键词：Tunneling in submicron CMOS single-photon avalanche diodes CMOS SPAD

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