SUPERLATTICES

作品数:221被引量:120H指数:5
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相关领域:电子电信理学更多>>
相关作者:金英进姜恩永任世伟金光日孙聆东更多>>
相关机构:天津大学金日成综合大学北京大学中国科学院数学与系统科学研究院更多>>
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相关基金:国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家教育部博士点基金更多>>
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Dual strategy of modulating growth temperature and inserting ultrathin barrier to enhance the wave function overlap in type-Ⅱ superlattices被引量:2
《Nano Research》2022年第6期5626-5632,共7页Yuyang Wu Yahui Zhang Yi Zhang Yunhao Zhao Yu Zhang Yingqiang Xu Chongyun Liang Zhichuan Niu Yi Shi Renchao Che 
supported by the National Natural Science Foundation of China(Nos.51725101,11727807,51672050,61790581,and 22088101);the Ministry of Science and Technology of China(No.2018YFA0209102);Infrastructure and Facility Construction Project of Zhejiang Laboratory.
Maximizing wave function overlap(WFO)within type-II superlattices(T2SL)is demonstrated to be important for improving their photoelectric properties,such as optical transition strength and quantum efficiency,which,howe...
关键词:wave function overlap type-II superlattices photoelectric properties charge distribution energy band alignment 
Long-Period InAs/GaSb Type-II Superlattices for Terahertz Application
《Journal of Modern Physics》2014年第17期1880-1888,共9页Longlong Li Jun Ni Wen Xu 
We present a theoretical study on the terahertz (THz) optoelectronic properties of long-period InAs/GaSb type-II super lattices (SLs). The eight-band k·p model is used to calculate the electronic structures of such S...
关键词:Long-Period INAS/GASB TYPE-II SLS THZ OPTOELECTRONIC Properties THZ Band-Gap and Absorption 
Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices被引量:2
《Journal of Semiconductors》2013年第11期74-78,共5页王国伟 向伟 徐应强 张亮 彭振宇 吕衍秋 司俊杰 王娟 邢军亮 任正伟 牛智川 
supported by the National Natural Science Foundation of China(Nos.U1037602,61274013,61290303);the National Basic Research Program of China(Nos.2010CB327602,2012CB932701,2013CB932904)
We present the fabrication of a mid-wavelength infrared focal plane array (FPA) based on type-II InAs/GaSb strain layer superlattices (SLs). The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, ...
关键词:SUPERLATTICES GASB focal plane array infrared detector 
Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging被引量:1
《Crystal Structure Theory and Applications》2013年第2期46-56,共11页Yuxin Song Shumin Wang Carl Asplund Rickard Marcks von Würtemberg Hedda Malm Amir Karim Xiang Lu Jun Shao 
InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and tran...
关键词:INAS/GASB TYPE-II Superlattce Molecular Beam EPITAXY Strain COMPENSATION 
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