PASSIVATION

作品数:398被引量:556H指数:8
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相关作者:邱冠周姜涛杨永斌仲崇斌潘颢丹更多>>
相关机构:中南大学东北大学中国科学院北京航空航天大学更多>>
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Revealing the Role of Hydrogen in Highly Efficient Ag-Substituted CZTSSe Photovoltaic Devices:Photoelectric Properties Modulation and Defect Passivation
《Nano-Micro Letters》2025年第4期166-180,共15页Xiaoyue Zhao Jingru Li Chenyang Hu Yafang Qi Zhengji Zhou Dongxing Kou Wenhui Zhou Shengjie Yuan Sixin Wu 
supported by the National Natural Science Foundation of China(51802081,62074052,and 62104061);the Natural Science Foundation of Henan Province(232300420145).
The presence of SnZn-related defects in Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)absorber results in large irreversible energy loss and extra irreversible electron-hole non-radiative recombination,thus hindering the efficiency enh...
关键词:CZTSSe Ag/H co-doping Photoelectric properties modulation Defect passivation Non-radiative recombination 
Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening被引量:1
《Nano-Micro Letters》2024年第10期244-256,共13页Xuanchi Yu Jia Guo Yulin Mao Chengwei Shan Fengshou Tian Bingheng Meng Zhaojin Wang Tianqi Zhang Aung Ko Ko Kyaw Shuming Chen Xiaowei Sun Kai Wang Rui Chen Guichuan Xing 
supported by the Science and Technology Development Fund,Macao SAR(File no.FDCT-0082/2021/A2,0010/2022/AMJ,006/2022/ALC);UM's research fund(File no.MYRG2022-00241-IAPME,MYRGCRG2022-00009-FHS);the research fund from Wuyi University(EF38/IAPME-XGC/2022/WYU);the Natural Science Foundation of China(61935017,62175268);Science,Technology and Innovation Commission of Shenzhen Municipality(Project Nos.JCYJ20220530113015035,JCYJ20210324120204011,and KQTD2015071710313656).
Metal halide perovskites,particularly the quasi-two-dimensional perovskite subclass,have exhibited considerable potential for next-generation electroluminescent materials for lighting and display.Nevertheless,the pres...
关键词:Synergistic passivation strategy Defects passivation Dielectric screening Perovskite light-emitting diodes 
In situ construction of PtSe_(2)/Ge Schottky junction array with interface passivation for broadband infrared photodetection and imaging被引量:1
《InfoMat》2024年第4期37-46,共10页Xue Li Shuo-En Wu Di Wu Tianxiang Zhao Pei Lin Zhifeng Shi Yongtao Tian Xinjian Li Longhui Zeng Xuechao Yu 
supported by the National Natural Science Foundation of China(Nos.U2004165,U22A20138,62374149,and 11974016);Natural Science Foundation of Henan Province,China(No.202300410376);grateful for the technical support from the Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO).
Infrared(IR)detection is vital for various military and civilian applications.Recent research has highlighted the potential of two-dimensional(2D)topological semimetals in IR detection due to their distinctive advanta...
关键词:broadband photodetection IMAGING platinum diselenide Schottky junction van der Waals integration 
Double-ended passivator enables dark-current-suppressed colloidal quantum dot photodiodes for CMOS-integrated infrared imagers
《InfoMat》2024年第1期108-122,共15页Peilin Liu Shuaicheng Lu Jing Liu Bing Xia Gaoyuan Yang Mo Ke Xuezhi Zhao Junrui Yang Yuxuan Liu Ciyu Ge Guijie Liang Wei Chen Xinzheng Lan Jianbing Zhang Liang Gao Jiang Tang 
National Natural Science Foundation of China,Grant/Award Numbers:U22A2083,62204091,62374068;National Key Research and Development Program of China,Grant/Award Number:2021YFA0715502;Key R&D program of Hubei Province,Grant/Award Number:2021BAA014;Innovation Project of Optics Valley Laboratory,Grant/Award Numbers:OVL2021BG009,OVL2023ZD002;Exploration Project of Natural Science Foundation of Zhejiang Province,Grant/Award Number:LY23F040005;Fund for Innovative Research Groups of the Natural Science Foundation of Hubei Province,Grant/Award Number:2020CFA034;Fund from Science,Technology and Innovation Commission of Shenzhen Municipality,Grant/Award Numbers:GJHZ20210705142540010,GJHZ20220913143403007;China Postdoctoral Science Foundation,Grant/Award Numbers:2021M691118,2022M711237,2022M721243,2023T160244。
Lead sulfide(PbS)colloidal quantum dot(CQD)photodiodes integrated with silicon-based readout integrated circuits(ROICs)offer a promising solution for the next-generation short-wave infrared(SWIR)imaging technology.Des...
关键词:CMOS integration colloidal quantum dots dark current suppression double-ended passivation infrared imager 
Enabling monodisperse perovskite phase with buried interface modification toward efficient light-emitting diodes
《Nano Research Energy》2023年第3期38-47,共10页Maowei Jiang Xiaomeng Zhang Feijiu Wang 
The performance of perovskite light-emitting diodes(PeLEDs)has been drastically improved recently.Therein,the coexistence of polydisperse perovskite domains has been one worthy subject of study.The crystallization of ...
关键词:perovskite light-emitting diode monodisperse phase defect passivation buried interface large area device 
Phase Regulation and Defect Passivation Enabled by Phosphoryl Chloride Molecules for Efficient Quasi‑2D Perovskite Light‑Emitting Diodes被引量:2
《Nano-Micro Letters》2023年第8期181-191,共11页Mingliang Li Yaping Zhao Jia Guo Xiangqian Qin Qin Zhang Chengbo Tian Peng Xu Yuqing Li Wanjia Tian Xiaojia Zheng Guichuan Xing Wen‑Hua Zhang Zhanhua Wei 
supported by the National Natural Science Foundation of China(U21A2078);Natural Science Foundation of Fujian Province(2020J06021,2019J01057,and 2020J01064);Scientific Research Funds of Huaqiao University.
Quasi-2D perovskites have attracted tremendous interest for application as lightemission layers in light-emitting diodes(LEDs).However,the heterogeneous n phase and non-uniform distribution still severely limit the fu...
关键词:Quasi-2D perovskite Phosphoryl chloride functional group Crystallization control N phase control PASSIVATION 
Dramatic reduction in dark current ofβ-Ga_(2)O_(3) ultraviolet photodectors viaβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface passivation
《Chinese Physics B》2023年第1期415-420,共6页岳建英 季学强 李山 岐晓辉 李培刚 吴真平 唐为华 
Project supported by China Postdoctoral Science Foundation (Grant No.042600055);Research on Frontiers of Materials Science,Beijing Municipal Science and Technology Commission (Grant No.Z181100004418006)。
Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based onβ-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3) film grown by metal-organic chemical vapor deposition.It was know...
关键词:β-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3) MOCVD PHOTODETECTORS defect passivation 
Defect Passivation on Lead-Free CsSnI_(3) Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability被引量:3
《Nano-Micro Letters》2022年第12期481-490,共10页Zheng Gao Hai Zhou Kailian Dong Chen Wang Jiayun Wei Zhe Li Jiashuai Li Yongjie Liu Jiang Zhao Guojia Fang 
We acknowledge grants from the National Natural Science Foundation of China(Nos.51972101,62074117,12134010);the Shenzhen Fundamental Research Program(No.JCYJ20190808152609307).
In recent years,Pb-free CsSnI_(3) perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much atten-tion in photoelectric devices.However,deep level defects in CsSnI_(3),su...
关键词:Pb-free PEROVSKITE CsSnI_(3) PHOTODETECTOR NANOWIRE 
A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications被引量:1
《Chinese Physics B》2022年第11期482-486,共5页Zhihong Chen Minhan Mi Jielong Liu Pengfei Wang Yuwei Zhou Meng Zhang Xiaohua Ma Yue Hao 
Project supported by the National Key Research and Development Program of China(Grant No.2020YFB1804902);the National Natural Science Foundation of China(Grant Nos.61904135,62090014,and 11690042);the Fundamental Research Funds for the Central Universities,the Innovation Fund of Xidian University(Grant No.YJS2213);the China Postdoctoral Science Foundation(Grant Nos.2018M640957 and BX20200262);the Key Research and Development Program of Guangzhou(Grant No.202103020002);Wuhu and Xidian University Special Fund for Industry–University-Research Cooperation(Grant No.XWYCXY-012021014HT);the Fundamental Research Funds for the Central Universities,China(Grant No.XJS221110)。
We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors(HEMTs)with thin-barrier to minimize surface leakage current to enhance the breakdown voltage.The bilay...
关键词:AlGaN/GaN HEMTs thin-barrier Si-rich SiN passivation current collapse surface leakage current millimeter-wave 
Wet etching and passivation of GaSb-based very long wavelength infrared detectors被引量:1
《Chinese Physics B》2022年第6期132-136,共5页Xue-Yue Xu Jun-Kai Jiang Wei-Qiang Chen Su-Ning Cui Wen-Guang Zhou Nong Li Fa-Ran Chang Guo-Wei Wang Ying-Qiang Xu Dong-Wei Jiang Dong-Hai Wu Hong-Yue Hao Zhi-Chuan Niu 
supported by the National Basic Research Program of China(Grant Nos.2018YFA0209102 and 2019YFA070104);the National Natural Science Foundation of China(Grant Nos.61790581 and 61274013);the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)。
The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solu...
关键词:InAs/GaSb/AlSb superlattice very long wavelength infrared(VLWIR)detector wet etching PASSIVATION 
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