supported by the National Natural Science Foundation of China(51802081,62074052,and 62104061);the Natural Science Foundation of Henan Province(232300420145).
The presence of SnZn-related defects in Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)absorber results in large irreversible energy loss and extra irreversible electron-hole non-radiative recombination,thus hindering the efficiency enh...
supported by the Science and Technology Development Fund,Macao SAR(File no.FDCT-0082/2021/A2,0010/2022/AMJ,006/2022/ALC);UM's research fund(File no.MYRG2022-00241-IAPME,MYRGCRG2022-00009-FHS);the research fund from Wuyi University(EF38/IAPME-XGC/2022/WYU);the Natural Science Foundation of China(61935017,62175268);Science,Technology and Innovation Commission of Shenzhen Municipality(Project Nos.JCYJ20220530113015035,JCYJ20210324120204011,and KQTD2015071710313656).
Metal halide perovskites,particularly the quasi-two-dimensional perovskite subclass,have exhibited considerable potential for next-generation electroluminescent materials for lighting and display.Nevertheless,the pres...
supported by the National Natural Science Foundation of China(Nos.U2004165,U22A20138,62374149,and 11974016);Natural Science Foundation of Henan Province,China(No.202300410376);grateful for the technical support from the Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO).
Infrared(IR)detection is vital for various military and civilian applications.Recent research has highlighted the potential of two-dimensional(2D)topological semimetals in IR detection due to their distinctive advanta...
National Natural Science Foundation of China,Grant/Award Numbers:U22A2083,62204091,62374068;National Key Research and Development Program of China,Grant/Award Number:2021YFA0715502;Key R&D program of Hubei Province,Grant/Award Number:2021BAA014;Innovation Project of Optics Valley Laboratory,Grant/Award Numbers:OVL2021BG009,OVL2023ZD002;Exploration Project of Natural Science Foundation of Zhejiang Province,Grant/Award Number:LY23F040005;Fund for Innovative Research Groups of the Natural Science Foundation of Hubei Province,Grant/Award Number:2020CFA034;Fund from Science,Technology and Innovation Commission of Shenzhen Municipality,Grant/Award Numbers:GJHZ20210705142540010,GJHZ20220913143403007;China Postdoctoral Science Foundation,Grant/Award Numbers:2021M691118,2022M711237,2022M721243,2023T160244。
Lead sulfide(PbS)colloidal quantum dot(CQD)photodiodes integrated with silicon-based readout integrated circuits(ROICs)offer a promising solution for the next-generation short-wave infrared(SWIR)imaging technology.Des...
The performance of perovskite light-emitting diodes(PeLEDs)has been drastically improved recently.Therein,the coexistence of polydisperse perovskite domains has been one worthy subject of study.The crystallization of ...
supported by the National Natural Science Foundation of China(U21A2078);Natural Science Foundation of Fujian Province(2020J06021,2019J01057,and 2020J01064);Scientific Research Funds of Huaqiao University.
Quasi-2D perovskites have attracted tremendous interest for application as lightemission layers in light-emitting diodes(LEDs).However,the heterogeneous n phase and non-uniform distribution still severely limit the fu...
Project supported by China Postdoctoral Science Foundation (Grant No.042600055);Research on Frontiers of Materials Science,Beijing Municipal Science and Technology Commission (Grant No.Z181100004418006)。
Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based onβ-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3) film grown by metal-organic chemical vapor deposition.It was know...
We acknowledge grants from the National Natural Science Foundation of China(Nos.51972101,62074117,12134010);the Shenzhen Fundamental Research Program(No.JCYJ20190808152609307).
In recent years,Pb-free CsSnI_(3) perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much atten-tion in photoelectric devices.However,deep level defects in CsSnI_(3),su...
Project supported by the National Key Research and Development Program of China(Grant No.2020YFB1804902);the National Natural Science Foundation of China(Grant Nos.61904135,62090014,and 11690042);the Fundamental Research Funds for the Central Universities,the Innovation Fund of Xidian University(Grant No.YJS2213);the China Postdoctoral Science Foundation(Grant Nos.2018M640957 and BX20200262);the Key Research and Development Program of Guangzhou(Grant No.202103020002);Wuhu and Xidian University Special Fund for Industry–University-Research Cooperation(Grant No.XWYCXY-012021014HT);the Fundamental Research Funds for the Central Universities,China(Grant No.XJS221110)。
We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors(HEMTs)with thin-barrier to minimize surface leakage current to enhance the breakdown voltage.The bilay...
supported by the National Basic Research Program of China(Grant Nos.2018YFA0209102 and 2019YFA070104);the National Natural Science Foundation of China(Grant Nos.61790581 and 61274013);the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)。
The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solu...