POLY-SI

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Preparation and microstructure characterization of poly-sialate-disiloxo type of geopolymeric cement
《Journal of Central South University》2009年第6期906-913,共8页张云升 孙伟 李宗津 
Project(2009CB623200) supported by the National Basic Research Program of China;Projects(50702014, 50878043) supported by the National Natural Science Foundation of China;Project(NCET-08-0116) supported by the Program for New Century Excellent Talents in University of Ministry of Education, China
In order to investigate the influence of three key molar ratios （n（SiO2）/n（Al2O3）, n（K2O）/n（Al2O3） and n（H2O）/n（K2O））, a total of nine potassium poly-sialate-disiloxo （K-PSDS） geopolymeric cement matri...
关键词：geopolymeric cement poly-sialate-disiloxo PREPARATION MICROSTRUCTURE 
Solution-based metal induced crystallization of a-Si
《Chinese Physics B》2009年第3期1237-1241,共5页吴春亚 李学冬 赵淑云 李娟 孟志国 熊绍珍 张芳 
supported by Key Project of National Natural Science Foundation of China (Grant No 60437030);"863" Project of National Ministry of Science and Technology of China (Grant No 2004AA33570);Tianjin Natural Science Foundation of China (Grant No 05YFJMJC01400)
This paper investigates a simplified metal induced crystallization （MIC） of a-Si, named solution-based MIC （SMIC）. The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ...
关键词：Ni-salt source metal induced crystallization （MIC） POLY-SI TFT 
Reaction mode between Si and Fe and evaluation of optimal species in poly-silicic-ferric coagulant被引量：25
《Journal of Environmental Sciences》2007年第6期678-688,共11页FU Ying YU Shui-li YU Yan-zhen QIU Li-ping HUI Ban 
Project supported by the National Basic Research Projects (973) of China(No.2004CB418500).
A kind of Fe-polysilicate polymer, poly-silicic-ferric （PSF） coagulant was prepared by co-polymerization （hydroxylation of mixture of Fe^3＋ and fresh polysilicic acid （PS））, in which PSF0.5, PSF1 or PSF3 denote...
关键词：poly-silicic-ferric coagulant reaction mode optimal species 
A Novel Sub-50nm Poly-Si Gate Patterning Technology
《Journal of Semiconductors》2001年第5期565-568,共4页张盛东 韩汝琦 刘晓彦 关旭东 李婷 张大成 
国家重点基础研究资助项目! (合同号 :G2 0 0 0 0 3 5 6)&&
A novel low-cost sub-50nm poly-Si gate patterning technology is proposed and experimentally demonstrated.The technology is resolution-independent,ie.,it does not contain any critical photolithographic steps.The nano-s...
关键词：poly-Si gate sub-50nm image transfer LITHOGRAPHY 
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