RESPONSIVITY

作品数:92被引量:110H指数:5
导出分析报告
相关领域:电子电信更多>>
相关作者:葛惟昆徐晓锋沈大可韩高荣更多>>
相关机构:中央司法警官学院香港科技大学浙江大学清华大学更多>>
相关期刊:更多>>
相关基金:国家自然科学基金国家重点基础研究发展计划北京市自然科学基金中国博士后科学基金更多>>
-

检索结果分析

结果分析中...
选择条件:
  • 期刊=Chinese Physics Lettersx
条 记 录,以下是1-4
视图:
排序:
High Responsivity Organic Ultraviolet Photodetector Based on NPB Donor and C60 Acceptor
《Chinese Physics Letters》2015年第8期200-203,共4页王永繁 曲奉东 周敬然 郭文斌 董玮 刘彩霞 阮圣平 
Supported by the National Natural Science Foundation of China under Grant Nos 61274068 and 61404058;the Project of Science and Technology Development Plan of Jilin Province under Grant Nos 20150204003GX and 20130206021GX;the Project of Science and Technology Plan of Changchun City under Grant No 14KG020
We report fabrication and characterization of organic heterojunction UV detectors based on N,N'-bis(naphthalen- 1-y1)-N,N'-bis (phenyl) benzidine (NPB) and fullerene C60. The effects of different thicknesses o...
关键词:NPB ACCEPTOR High Responsivity Organic Ultraviolet Photodetector Based on NPB Donor and C 
Enhancement of Photodetector Responsivity and Response Speed Using Cascaded-Cavity Structure with Subwavelength Metallic Slit
《Chinese Physics Letters》2013年第7期76-78,共3页DU Ming-Di SUN Jun-Qiang QIN Yi LIAO Jian-Fei 
Supported by the National Natural Science Foundation of China under Grant No 61178002.
A cascaded-cavity photodetector with subwavelength metallic slit is proposed to enhance responsivity and response speed simultaneously.Responsivity enhancement depends on light transmittance increased by using a subwa...
关键词:structure. CAVITY RES 
Ultra Low Dark Current,High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes被引量:1
《Chinese Physics Letters》2012年第11期224-226,共3页LI Bin YANG Huai-Wei GUI Qiang YANG Xiao-Hong WANG Jie WANG Xiu-Ping LIU Shao-Qing HAN Qin 
Supported by the National Natural Science Foundation of China under Grant Nos 61176053,61274069,61021003;the National Key Basic Research Program of China under Grant No 2012CB933503;the National High-Technology Research and Development Program of China under Grant No 2012AA012202.
A separate absorption,grading,charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated.It has a thin multiplication layer and a planar structure.Throu...
关键词:INGAAS/INP BREAKDOWN FLOATING 
Analysis of Responsivity and Signal-to-Noise Ratio in PEPT
《Chinese Physics Letters》2012年第11期70-73,共4页ZHOU Quan GUO Shu-Xu LI Zhao-Han SONG Jing-Yi CHANG Yu-Chun 
Supported by the National Natural Science Foundation of China under Grant Nos 61076046 and 61106003;the Science and Technology Development Plan Projects of Jilin Province(No 20100501)。
We analyze the responsivity and signal-to-noise ratio(SNR)of a punchthrough enhanced phototransistor(PEPT).Measurement results show that the PEPT exhibits a good response to light over a wide range of intensity.Becaus...
关键词:RESPONSIVITY TRANSISTOR SIGNAL 
检索报告 对象比较 聚类工具 使用帮助 返回顶部