Supported by the National Natural Science Foundation of China under Grant Nos 61274068 and 61404058;the Project of Science and Technology Development Plan of Jilin Province under Grant Nos 20150204003GX and 20130206021GX;the Project of Science and Technology Plan of Changchun City under Grant No 14KG020
We report fabrication and characterization of organic heterojunction UV detectors based on N,N'-bis(naphthalen- 1-y1)-N,N'-bis (phenyl) benzidine (NPB) and fullerene C60. The effects of different thicknesses o...
Supported by the National Natural Science Foundation of China under Grant No 61178002.
A cascaded-cavity photodetector with subwavelength metallic slit is proposed to enhance responsivity and response speed simultaneously.Responsivity enhancement depends on light transmittance increased by using a subwa...
Supported by the National Natural Science Foundation of China under Grant Nos 61176053,61274069,61021003;the National Key Basic Research Program of China under Grant No 2012CB933503;the National High-Technology Research and Development Program of China under Grant No 2012AA012202.
A separate absorption,grading,charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated.It has a thin multiplication layer and a planar structure.Throu...
Supported by the National Natural Science Foundation of China under Grant Nos 61076046 and 61106003;the Science and Technology Development Plan Projects of Jilin Province(No 20100501)。
We analyze the responsivity and signal-to-noise ratio(SNR)of a punchthrough enhanced phototransistor(PEPT).Measurement results show that the PEPT exhibits a good response to light over a wide range of intensity.Becaus...