P-TYPE

作品数:237被引量:340H指数:8
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相关作者:傅玉灿严明华李曙生肖冰徐鸿钧更多>>
相关机构:中国科学院国立台北科技大学开封广佳汽车饰件有限公司浙江大学更多>>
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Enhancing thermoelectric performance of p-type SnTe through manipulating energy band structures and decreasing electronic thermal conductivity
《Rare Metals》2024年第7期3232-3241,共10页Xin Qian Hao-Ran Guo Jia-Xin Lyu Bang-Fu Ding Xing-Yuan San Xiao Zhang Jiang-Long Wang Shu-Fang Wang 
financially supported by the National Natural Science Foundation of China (Nos.52102234 and 51972094);the High-level Talents Research Initiation Project of Hebei University (No.521000981421);Hebei Province Introduced Overseas Student Funding Project (No.C20210313)。
SnTe has received considerable attention as an environmentally friendly alternative to the representative thermoelectric material of PbTe.However,excessive hole carrier concentration in SnTe results in an extremely lo...
关键词:Thermoelectric materials SnTe Energy band structure Electronic thermal conductivity ZT value 
Thermoelectric transport properties of p-type Bi_(2)Se_(3)-Sb_(2)Se_(3)-In_(2)Se_(3) high entropy compounds
《Rare Metals》2024年第7期3415-3421,共7页Feng Jiang Cheng-Liang Xia Yong-Bin Zhu Jun Li Yue Chen Wei-Shu Liu 
financially supported by Shenzhen Key Program for Long-Term Academic Support Plan (No. 20200925164021002);Shenzhen Innovation Program for Distinguished Young Scholars (No.RCJC20210706091949018);Guangdong Provincial Key Laboratory Program from the Department of Science and Technology of Guangdong Province (No. 2021B1212040001)。
The introduction of entropy concept into thermoelectric materials recently has attracted broad interest.Herein,we showed the phase diagram of the ternary systems of Bi_(2)Se_(3)-Sb_(2)Se_(3)-In_(2)Se_(3).Among the hig...
关键词:ENTROPY (3) COMPOUNDS 
Realizing p-type performance in low-thermal-conductivity BiSbSe_(3) via lead doping被引量:7
《Rare Metals》2023年第11期3601-3606,共6页Si-Ning Wang Han-Chen Lu Du-Jiang Li Yang Jin Xing-Yi Li Yan Yan Kai Gu Yu-Ting Qiu Li-Dong Zhao 
financially supported by the National Natural Science Foundation of China (Nos.52002011,51571007,and 51772012);the National Key Research and Development Program of China (No.2021YFB3201100);the National Key Research and Development Program of China (No.2018YFA0702100);Beijing Natural Science Foundation (No.JQ18004);111 Project (No.B17002);the National Science Fund for Distinguished Young Scholars (No.51925101);the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure (No.SKL202005SIC)。
BiSbSe_(3) is an intrinsic n-type thermoelectric material,which attracts a lot of research interest due to its low lattice thermal conductivity and multiple band structure,and it exhibits excellent thermoelectric prop...
关键词:DOPANT DOPING CONDUCTIVITY 
Improved thermoelectric properties of zone-melted p-type bismuth-telluride-based alloys for power generation被引量:5
《Rare Metals》2022年第5期1490-1495,共6页Ren-Shuang Zhai Tie-Jun Zhu 
the Research Project of FerroTec Group(No.000RD20001);the National Natural Science Foundation of China(Nos.61534001 and 11574267)。
Zone-melted bismuth-telluride-based alloys(ZM-BT) are extensively applied to manufacture commercial thermoelectric power generators(TEG). Optimizing the average figure of merit(zT) during 300–500 K of ZM-BT is favora...
关键词:ALLOYS BISMUTH power 
Realizing high thermoelectric properties in p-type polycrystalline SnSe by inducing DOS distortion被引量:11
《Rare Metals》2021年第10期2819-2828,共10页Yu-Ping Wang Bing-Chao Qin Dong-Yang Wang Tao Hong Xiang Gao Li-Dong Zhao 
financially supported by the National Key Research and Development Program of China (Nos.2018YFA0702100 and 2018YFB0703600);the National Natural Science Foundation of China (Nos.51772012 and 51671015);Beijing Natural Science Foundation (No.JQ18004);National Postdoctoral Program for Innovative Talents (No.BX20200028);the support from the National Science Fund for Distinguished Young Scholars (No.51925101);the high performance computing (HPC) resources at Beihang University。
SnSe crystals have been discovered as one of the most efficient thermoelectric materials due to their remarkable thermal and electrical transports. But the polycrystalline SnSe possesses much lower performance especia...
关键词:THERMOELECTRIC p-type polycrystalline SnSe Carrier mobility Resonant effect Band effective mass 
Thermoelectric performance of p-type zone-melted Se-doped Bi_(0.5)Sb_(1.5)Te_3 alloys被引量:17
《Rare Metals》2018年第4期308-315,共8页Ren-Shuang Zhai Ye-Hao Wu Tie-Jun Zhu Xin-Bing Zhao 
supported by the National Natural Science Foundation of China (Nos. 61534001 and 11574267);the National Science Fund for Distinguished Young Scholars (No.51725102)
For zone-melted (ZM) bismuth telluride-based alloys, which are widely commercially available for solidstate cooling and low-temperature power generation around room temperature, introducing point defects is the chie...
关键词:Thermoelectric materials Bismuth telluride Zone melting Se doping Bi0.5Sb1.5Te3 
Energy band alignment of HfO2 on p-type(100)InP
《Rare Metals》2017年第3期198-201,共4页Meng-Meng Yang Hai-Ling Tu Jun Du Feng Wei Yu-Hua Xiong Hong-Bin Zhao Xin-Qiang Zhang 
financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013)
The band alignment of HfO2 film on p-type (100) InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron sp...
关键词:Band alignment HFO2 INP Large conductionband offset 
Growth of nitrogen-doped p-type ZnO thin films prepared by atomic layer epitaxy被引量:2
《Rare Metals》2006年第z1期110-114,共5页LEE Chongmu LIM Jongmin PARK Suyoung KIM Hyounwoo 
Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and...
关键词:p-type ZnO atomic layer deposition electrical resistivity carrier concentration PHOTOLUMINESCENCE 
Formation and Removement Mechanism of Haze Defects on(111)p-type Silicon Wafers
《Rare Metals》1994年第1期31-36,共6页徐岳生 李养贤 刘彩池 鞠玉林 唐建 朱则韶 
The haze defects on p-type (111) silicon wafers were investigated by means of chemical etching, Fouriertransform infra-red microscopy (FTIR), spreading resistance measurement. secondary ion mass spectroscopy(SLMS), tr...
关键词:Oxidation haze defects Formation and removement mechanism Fast-neutron irradiation Internal gettering (IG) 
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