SUPERJUNCTION

作品数：18被引量：21H指数：3
导出分析报告
相关领域：电子电信更多>>
相关作者：李肇基方健乔明黄淮吴郁更多>>
相关机构：电子科技大学北京工业大学更多>>
相关期刊：《物理学报》《Journal of Semiconductors》《The Journal of China Universities of Posts and Telecommunications》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家教育部博士点基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 主题=4H-SICx
共 条 记 录，以下是1-2
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode
《The Journal of China Universities of Posts and Telecommunications》2024年第2期3-9,27,共8页Huang Yi Wang Xuecheng Gao Sheng Liu Bin Zhang Hongsheng Han Genquan 
the General Program of National Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0475);the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications(A2023-7);the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality(cstc2019jszx-zdztzxX0005,cstc2020jscx-gksbX0011)。
In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theo...
关键词：4H-silicon carbide(4H-SiC) trench-gate SUPERJUNCTION clamping diode 
Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery被引量：4
《Chinese Physics B》2012年第1期449-452,共4页Cao Lin Pu Hong-Bin Chen Zhi-Ming Zang Yuan 
Project supported by the National Natural Science Foundation of China(Grant No.60876050);the Research Fund for Excellent Doctor Degree Thesis of Xi'an University of Technology,China
In this paper, a 4H-SiC semi-superjunction （S J） Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ struct...
关键词：4H-SIC semi-superjunction Schottky barrier diode softness factor 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部